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HUF75645S3ST-VB Product details
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HUF75645S3ST-VB MOSFET Product Introduction
**HUF75645S3ST-VB** is a high-performance N-Channel MOSFET packaged in TO263. This MOSFET uses advanced Trench technology and has extremely low on-resistance and excellent switching performance. Its maximum drain-source voltage is 100V and can withstand a continuous current of up to 100A, making it particularly suitable for high-power and high-voltage applications. The gate threshold voltage is 2.5V, ensuring stable operation even at a lower gate drive voltage, making it suitable for circuit designs that require high efficiency.
**HUF75645S3ST-VB** is a high-performance N-Channel MOSFET packaged in TO263. This MOSFET uses advanced Trench technology and has extremely low on-resistance and excellent switching performance. Its maximum drain-source voltage is 100V and can withstand a continuous current of up to 100A, making it particularly suitable for high-power and high-voltage applications. The gate threshold voltage is 2.5V, ensuring stable operation even at a lower gate drive voltage, making it suitable for circuit designs that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: HUF75645S3ST-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: HUF75645S3ST-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High-power power converters**: The low on-resistance and high current carrying capacity of HUF75645S3ST-VB make it ideal for high-power power converters such as DC-DC converters and AC-DC adapters. Its high voltage tolerance and low power loss can significantly improve the efficiency and stability of the system, especially when a large amount of power needs to be handled.
2. **Motor drive system**: Due to its ability to handle high currents and low on-resistance, HUF75645S3ST-VB is suitable for motor control systems such as DC motor drives and stepper motor drives. This MOSFET can provide stable driving capabilities under high current conditions and reduce system heat generation, improving system reliability.
3. **Automotive electronics applications**: In automotive electronic systems, such as electric vehicle drive systems and battery management modules, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. Its high voltage withstand characteristics also make it suitable for working in the high voltage environment of the car, providing high efficiency and long-term reliability.
4. **Power Protection Circuit**: HUF75645S3ST-VB can be used in power protection circuits, such as overcurrent protection and short-circuit protection circuits. Its low on-resistance and high current handling capability ensure the safety and stability of the circuit, and can effectively prevent circuit overload and damage.
5. **Renewable Energy System**: In renewable energy applications such as solar inverters and wind power generation systems, HUF75645S3ST-VB can provide efficient power conversion and management. Its high current and voltage handling capabilities help improve the energy efficiency of the system and ensure stable energy output.
These application examples show the wide applicability of HUF75645S3ST-VB MOSFET in high-power and high-voltage circuits, suitable for a variety of occasions requiring high current and high efficiency.
1. **High-power power converters**: The low on-resistance and high current carrying capacity of HUF75645S3ST-VB make it ideal for high-power power converters such as DC-DC converters and AC-DC adapters. Its high voltage tolerance and low power loss can significantly improve the efficiency and stability of the system, especially when a large amount of power needs to be handled.
2. **Motor drive system**: Due to its ability to handle high currents and low on-resistance, HUF75645S3ST-VB is suitable for motor control systems such as DC motor drives and stepper motor drives. This MOSFET can provide stable driving capabilities under high current conditions and reduce system heat generation, improving system reliability.
3. **Automotive electronics applications**: In automotive electronic systems, such as electric vehicle drive systems and battery management modules, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. Its high voltage withstand characteristics also make it suitable for working in the high voltage environment of the car, providing high efficiency and long-term reliability.
4. **Power Protection Circuit**: HUF75645S3ST-VB can be used in power protection circuits, such as overcurrent protection and short-circuit protection circuits. Its low on-resistance and high current handling capability ensure the safety and stability of the circuit, and can effectively prevent circuit overload and damage.
5. **Renewable Energy System**: In renewable energy applications such as solar inverters and wind power generation systems, HUF75645S3ST-VB can provide efficient power conversion and management. Its high current and voltage handling capabilities help improve the energy efficiency of the system and ensure stable energy output.
These application examples show the wide applicability of HUF75645S3ST-VB MOSFET in high-power and high-voltage circuits, suitable for a variety of occasions requiring high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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