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HUF75639S3-VB Product details
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Product Introduction
**Model: HUF75639S3-VB**
**Package: TO262**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75639S3-VB is a high-performance single N-Channel MOSFET in TO262 package. It uses Trench technology to provide low on-resistance and high current handling capability, which is very suitable for high-power and high-efficiency applications. With a drain-source voltage withstand capability of 100V and a maximum continuous current of 100A, it performs well in various high-power applications.
**Model: HUF75639S3-VB**
**Package: TO262**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75639S3-VB is a high-performance single N-Channel MOSFET in TO262 package. It uses Trench technology to provide low on-resistance and high current handling capability, which is very suitable for high-power and high-efficiency applications. With a drain-source voltage withstand capability of 100V and a maximum continuous current of 100A, it performs well in various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package:** TO262
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 2.5V
- **RDS(ON) (on-resistance):**
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **ID (maximum continuous current):** 100A
- **Technology:** Trench
- **Package:** TO262
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 2.5V
- **RDS(ON) (on-resistance):**
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **ID (maximum continuous current):** 100A
- **Technology:** Trench
Domain and module applications：
Application fields and modules
HUF75639S3-VB is mainly suitable for the following fields and modules:
1. **High-power switching circuits:** The 100A maximum continuous current capability and 100V high voltage withstand capability of this MOSFET make it very suitable for high-power switching circuits. It can efficiently control large current loads and is suitable for power converters and power management systems to provide stable and efficient switching operations.
2. **DC-DC converters:** In DC-DC converter applications, HUF75639S3-VB can effectively improve conversion efficiency as a switching element. Its low RDS(ON) and high current handling capability make it suitable for high-efficiency power modules and battery-powered systems.
3. **Motor drives:** Due to its high current capability and low on-resistance, this MOSFET is suitable for motor drive applications such as power tools and electric vehicle drive systems. It enables precise motor control and provides stable power output.
4. **Power amplifier:** In power amplifier design, HUF75639S3-VB is able to handle high power output, especially in audio amplifiers and RF amplifiers. Its high current capability and low on-resistance help achieve efficient and stable power output.
5. **Automotive electronics:** In automotive electronic systems, such as power management and battery protection modules, this MOSFET is able to handle high voltage and high current requirements. Its reliability and high performance make it suitable for power control and protection applications in automotive electrical systems.
In general, HUF75639S3-VB is suitable for high-power, high-efficiency switching applications, especially in power management, motor drive and power amplification fields, with its high voltage tolerance and extremely low on-resistance.
HUF75639S3-VB is mainly suitable for the following fields and modules:
1. **High-power switching circuits:** The 100A maximum continuous current capability and 100V high voltage withstand capability of this MOSFET make it very suitable for high-power switching circuits. It can efficiently control large current loads and is suitable for power converters and power management systems to provide stable and efficient switching operations.
2. **DC-DC converters:** In DC-DC converter applications, HUF75639S3-VB can effectively improve conversion efficiency as a switching element. Its low RDS(ON) and high current handling capability make it suitable for high-efficiency power modules and battery-powered systems.
3. **Motor drives:** Due to its high current capability and low on-resistance, this MOSFET is suitable for motor drive applications such as power tools and electric vehicle drive systems. It enables precise motor control and provides stable power output.
4. **Power amplifier:** In power amplifier design, HUF75639S3-VB is able to handle high power output, especially in audio amplifiers and RF amplifiers. Its high current capability and low on-resistance help achieve efficient and stable power output.
5. **Automotive electronics:** In automotive electronic systems, such as power management and battery protection modules, this MOSFET is able to handle high voltage and high current requirements. Its reliability and high performance make it suitable for power control and protection applications in automotive electrical systems.
In general, HUF75639S3-VB is suitable for high-power, high-efficiency switching applications, especially in power management, motor drive and power amplification fields, with its high voltage tolerance and extremely low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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