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HUF75639S3ST-VB Product details
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Product Introduction
**Model: HUF75639S3ST-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 100V**
**VGS: ±20V**
**Vth: 1.8V**
**RDS(ON) @ VGS=10V: 20mΩ**
**ID: 70A**
**Technology: Trench**
HUF75639S3ST-VB is a high-performance single N-channel MOSFET in TO263 package. It is designed for high voltage and high current applications with low on-resistance and high current handling capability. Using Trench technology, this MOSFET is able to provide stable switching performance under high power conditions and is suitable for various power management and power conversion applications.
**Model: HUF75639S3ST-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 100V**
**VGS: ±20V**
**Vth: 1.8V**
**RDS(ON) @ VGS=10V: 20mΩ**
**ID: 70A**
**Technology: Trench**
HUF75639S3ST-VB is a high-performance single N-channel MOSFET in TO263 package. It is designed for high voltage and high current applications with low on-resistance and high current handling capability. Using Trench technology, this MOSFET is able to provide stable switching performance under high power conditions and is suitable for various power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @ VGS=10V: 20mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @ VGS=10V: 20mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power DC-DC converters**
HUF75639S3ST-VB is ideal for use in high-power DC-DC converters. Its low on-resistance (20mΩ @ VGS=10V) and high current capability (70A) enable it to efficiently handle high-power conversions while reducing power losses and heat generation, improving conversion efficiency.
2. **Motor drive systems**
In motor drive applications, HUF75639S3ST-VB can be used as a switching element, especially in high-voltage and high-current scenarios. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive high-power motors, ensuring stable and efficient operation of the motor system.
3. **Power amplifiers**
This MOSFET is also suitable for the design of power amplifiers, especially when high-power signals need to be processed. The low on-resistance and high current capability of HUF75639S3ST-VB enable it to effectively improve power handling capability and amplification efficiency in high power amplifiers.
4. **High Voltage Load Switch**
HUF75639S3ST-VB can be used in high voltage load switch applications such as power protection and high voltage load control circuits. Its low on-resistance and high current capability can stably control high voltage loads while effectively protecting circuits from overcurrent and overvoltage.
These application examples demonstrate the superior performance and wide applicability of HUF75639S3ST-VB in high voltage and high current applications, especially in power management and power control circuits that require high efficiency and high reliability.
1. **High-power DC-DC converters**
HUF75639S3ST-VB is ideal for use in high-power DC-DC converters. Its low on-resistance (20mΩ @ VGS=10V) and high current capability (70A) enable it to efficiently handle high-power conversions while reducing power losses and heat generation, improving conversion efficiency.
2. **Motor drive systems**
In motor drive applications, HUF75639S3ST-VB can be used as a switching element, especially in high-voltage and high-current scenarios. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive high-power motors, ensuring stable and efficient operation of the motor system.
3. **Power amplifiers**
This MOSFET is also suitable for the design of power amplifiers, especially when high-power signals need to be processed. The low on-resistance and high current capability of HUF75639S3ST-VB enable it to effectively improve power handling capability and amplification efficiency in high power amplifiers.
4. **High Voltage Load Switch**
HUF75639S3ST-VB can be used in high voltage load switch applications such as power protection and high voltage load control circuits. Its low on-resistance and high current capability can stably control high voltage loads while effectively protecting circuits from overcurrent and overvoltage.
These application examples demonstrate the superior performance and wide applicability of HUF75639S3ST-VB in high voltage and high current applications, especially in power management and power control circuits that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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