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HUF75639G3-VB Product details
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HUF75639G3-VB MOSFET Product Introduction
HUF75639G3-VB is a high-performance single N-channel MOSFET packaged in TO247. It is designed for medium-to-high voltage and high current applications, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 72A. This MOSFET uses advanced Trench technology, and its on-resistance is 18mΩ at VGS=10V. This low on-resistance effectively reduces power loss and improves system efficiency. Its 1.8V threshold voltage (Vth) ensures that the MOSFET can be efficiently turned on at a lower gate-source voltage, providing good switching performance and current control capability.
HUF75639G3-VB is a high-performance single N-channel MOSFET packaged in TO247. It is designed for medium-to-high voltage and high current applications, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 72A. This MOSFET uses advanced Trench technology, and its on-resistance is 18mΩ at VGS=10V. This low on-resistance effectively reduces power loss and improves system efficiency. Its 1.8V threshold voltage (Vth) ensures that the MOSFET can be efficiently turned on at a lower gate-source voltage, providing good switching performance and current control capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
HUF75639G3-VB Detailed parameter description
1. **Package type**: TO247
TO247 package is suitable for applications handling higher power and current, provides excellent heat dissipation performance and durability, and is suitable for electronic circuits requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration enables it to perform well in current transmission and switch control, and is suitable for various high-power application scenarios.
3. **Drain-source voltage (VDS)**: 100V
Suitable for medium and high voltage applications, capable of handling higher voltage power conversion tasks, ensuring stable operation of the device during power management and conversion.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range improves design flexibility and enhances the device's tolerance to overvoltage, ensuring reliability and durability.
5. **Threshold Voltage (Vth)**: 1.8V
The lower threshold voltage ensures that the MOSFET can be turned on at a lower gate-source voltage, improving the switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
Low on-resistance reduces power loss and heat generation, improves the efficiency of the overall system, and is suitable for high current applications.
7. **Maximum Drain Current (ID)**: 72A
The drain current capability of up to 72A makes it suitable for handling large current loads and provides powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and excellent switching performance, suitable for high power and high efficiency application scenarios.
1. **Package type**: TO247
TO247 package is suitable for applications handling higher power and current, provides excellent heat dissipation performance and durability, and is suitable for electronic circuits requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration enables it to perform well in current transmission and switch control, and is suitable for various high-power application scenarios.
3. **Drain-source voltage (VDS)**: 100V
Suitable for medium and high voltage applications, capable of handling higher voltage power conversion tasks, ensuring stable operation of the device during power management and conversion.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range improves design flexibility and enhances the device's tolerance to overvoltage, ensuring reliability and durability.
5. **Threshold Voltage (Vth)**: 1.8V
The lower threshold voltage ensures that the MOSFET can be turned on at a lower gate-source voltage, improving the switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
Low on-resistance reduces power loss and heat generation, improves the efficiency of the overall system, and is suitable for high current applications.
7. **Maximum Drain Current (ID)**: 72A
The drain current capability of up to 72A makes it suitable for handling large current loads and provides powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and excellent switching performance, suitable for high power and high efficiency application scenarios.
Domain and module applications：
Application fields and module examples
1. **High-power power converter**: The high current handling capability and low on-resistance of HUF75639G3-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can improve power conversion efficiency and reduce energy loss. It is widely used in server power supplies and high-power power modules.
2. **Motor drive system**: In motor control applications, this MOSFET can effectively handle high current loads and provide stable and efficient motor drive. It is widely used in industrial automation, power tools and electric vehicles, etc. to ensure the reliability of motor operation.
3. **Battery Management System (BMS)**: HUF75639G3-VB is suitable for use in battery management systems. It can efficiently manage the charging and discharging process of the battery. It is suitable for electric vehicles, energy storage systems and other high-power battery applications to ensure the safety and performance of the battery pack.
4. **LED drive circuit**: Due to its high current capability and low power loss characteristics, this MOSFET is also suitable for use in LED drive circuits, and can provide stable LED drive current for high-brightness LED lighting and backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for applications that require high power processing, such as audio amplifiers and broadcasting systems.
6. **Inverter**: The high current capability and low on-resistance of HUF75639G3-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing stable power management and conversion capabilities.
Through the introduction of these application fields, it can be seen that HUF75639G3-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and wide adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
1. **High-power power converter**: The high current handling capability and low on-resistance of HUF75639G3-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can improve power conversion efficiency and reduce energy loss. It is widely used in server power supplies and high-power power modules.
2. **Motor drive system**: In motor control applications, this MOSFET can effectively handle high current loads and provide stable and efficient motor drive. It is widely used in industrial automation, power tools and electric vehicles, etc. to ensure the reliability of motor operation.
3. **Battery Management System (BMS)**: HUF75639G3-VB is suitable for use in battery management systems. It can efficiently manage the charging and discharging process of the battery. It is suitable for electric vehicles, energy storage systems and other high-power battery applications to ensure the safety and performance of the battery pack.
4. **LED drive circuit**: Due to its high current capability and low power loss characteristics, this MOSFET is also suitable for use in LED drive circuits, and can provide stable LED drive current for high-brightness LED lighting and backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for applications that require high power processing, such as audio amplifiers and broadcasting systems.
6. **Inverter**: The high current capability and low on-resistance of HUF75639G3-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing stable power management and conversion capabilities.
Through the introduction of these application fields, it can be seen that HUF75639G3-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and wide adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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