HUF75617D3-VB Product details
Product introduction:
**HUF75617D3-VB** is a high-performance N-Channel MOSFET in TO251 package. This MOSFET adopts advanced Trench technology and has good conduction performance and switching characteristics. Its maximum drain-source voltage is 100V and can withstand up to 15A of continuous current, suitable for use in applications with higher voltage and current requirements. The gate threshold voltage is 1.8V, ensuring stable conduction even at lower gate drive voltage.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: HUF75617D3-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications:
1. **Power Converters**: The HUF75617D3-VB MOSFET excels in high voltage power converters, such as DC-DC converters and switching power modules. Its high withstand voltage characteristics and moderate on-resistance enable it to effectively manage power in these applications and improve system efficiency and stability.
2. **Motor Control**: Due to its high voltage carrying capability and reliable switching performance, the HUF75617D3-VB is suitable for motor control systems, especially those that need to operate at high voltages. It is capable of handling large currents and provides stable driving capabilities.
3. **Automotive Electronics**: In automotive electronics applications, such as battery management systems and power conversion modules for electric vehicles, this MOSFET can effectively handle high voltage and current loads. Its stable switching performance and durability make it suitable for long-term use in automotive environments.
4. **Power Management and Protection Circuits**: HUF75617D3-VB is suitable for power management and protection circuits, such as power protection modules and battery protection circuits. Its high withstand voltage and good conduction characteristics help ensure the reliability and safety of the circuit.
5. **LED Driver**: In high-voltage LED drive applications, this MOSFET is able to provide a stable current and effectively manage power losses. Its high withstand voltage capability and good switching performance make it an ideal choice for LED drivers.
These application examples demonstrate the wide applicability of the HUF75617D3-VB MOSFET in high-voltage and high-power applications, suitable for a variety of occasions that require high current and high voltage handling.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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