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HUF75617D3ST-VB Product details
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Product Introduction
**Model: HUF75617D3ST-VB**
**Package: TO252**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75617D3ST-VB is a high-performance N-Channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology to provide stable performance and reliable switching operation. With a drain-source voltage withstand capability of 100V and a maximum continuous current of 15A, it is suitable for various application scenarios requiring high voltage and high current control.
**Model: HUF75617D3ST-VB**
**Package: TO252**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75617D3ST-VB is a high-performance N-Channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology to provide stable performance and reliable switching operation. With a drain-source voltage withstand capability of 100V and a maximum continuous current of 15A, it is suitable for various application scenarios requiring high voltage and high current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 1.8V
- **RDS(ON) (on-resistance):** 114mΩ @ VGS = 10V
- **ID (maximum continuous current):** 15A
- **Technology:** Trench
- **Package:** TO252
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 1.8V
- **RDS(ON) (on-resistance):** 114mΩ @ VGS = 10V
- **ID (maximum continuous current):** 15A
- **Technology:** Trench
Domain and module applications：
Application fields and modules
HUF75617D3ST-VB is mainly suitable for the following fields and modules:
1. **Power management system:** This MOSFET can handle voltages up to 100V, and its 15A current capability makes it very suitable for use as a switching element in power management systems. It can effectively control power switches and provide stable current control, suitable for power converters and battery management systems.
2. **DC-DC converter:** In DC-DC converter applications, HUF75617D3ST-VB can be used as a switching element to help achieve efficient voltage conversion. Its high voltage tolerance and relatively low on-resistance help improve conversion efficiency and are suitable for various power modules and embedded systems.
3. **Load switch:** In switching applications that need to control high-voltage loads, the MOSFET's 100V VDS and 15A ID can meet the requirements. Its low on-resistance helps reduce power losses and is suitable for power switching and load control.
4. **Power amplifier:** HUF75617D3ST-VB is also used in power amplifier design, especially in amplifiers that require high voltage and current. Its high voltage tolerance and relatively low on-resistance help achieve efficient power output.
5. **Automotive electronics:** In automotive electronic systems, such as battery management and power distribution modules, this MOSFET can handle high voltage and high current requirements. Its reliability and stability make it suitable for power control and protection applications in automotive electrical systems.
In general, HUF75617D3ST-VB is suitable for high voltage, high current switching applications with its high voltage tolerance and moderate on-resistance, especially in power management, motor control and automotive electronics.
HUF75617D3ST-VB is mainly suitable for the following fields and modules:
1. **Power management system:** This MOSFET can handle voltages up to 100V, and its 15A current capability makes it very suitable for use as a switching element in power management systems. It can effectively control power switches and provide stable current control, suitable for power converters and battery management systems.
2. **DC-DC converter:** In DC-DC converter applications, HUF75617D3ST-VB can be used as a switching element to help achieve efficient voltage conversion. Its high voltage tolerance and relatively low on-resistance help improve conversion efficiency and are suitable for various power modules and embedded systems.
3. **Load switch:** In switching applications that need to control high-voltage loads, the MOSFET's 100V VDS and 15A ID can meet the requirements. Its low on-resistance helps reduce power losses and is suitable for power switching and load control.
4. **Power amplifier:** HUF75617D3ST-VB is also used in power amplifier design, especially in amplifiers that require high voltage and current. Its high voltage tolerance and relatively low on-resistance help achieve efficient power output.
5. **Automotive electronics:** In automotive electronic systems, such as battery management and power distribution modules, this MOSFET can handle high voltage and high current requirements. Its reliability and stability make it suitable for power control and protection applications in automotive electrical systems.
In general, HUF75617D3ST-VB is suitable for high voltage, high current switching applications with its high voltage tolerance and moderate on-resistance, especially in power management, motor control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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