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HUF75545S3S-VB Product details
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Product Introduction
**Model: HUF75545S3S-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 80V**
**VGS: ±20V**
**Vth: 3V**
**RDS(ON) @ VGS=4.5V: 10mΩ**
**RDS(ON) @ VGS=10V: 6mΩ**
**ID: 120A**
**Technology: Trench**
HUF75545S3S-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET has extremely low on-resistance and high current handling capability, suitable for high voltage and high power applications. Utilizing Trench technology, it can provide excellent switching performance and thermal management in high current and high voltage environments.
**Model: HUF75545S3S-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 80V**
**VGS: ±20V**
**Vth: 3V**
**RDS(ON) @ VGS=4.5V: 10mΩ**
**RDS(ON) @ VGS=10V: 6mΩ**
**ID: 120A**
**Technology: Trench**
HUF75545S3S-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET has extremely low on-resistance and high current handling capability, suitable for high voltage and high power applications. Utilizing Trench technology, it can provide excellent switching performance and thermal management in high current and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 10mΩ
- @ VGS=10V: 6mΩ
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 10mΩ
- @ VGS=10V: 6mΩ
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power DC-DC converter**
HUF75545S3S-VB is ideal for use in high-power DC-DC converters. Its low on-resistance (6mΩ @ VGS=10V) and high current capability (120A) ensure efficient power conversion and low power loss, making it an excellent performer in high-performance power conversion modules.
2. **Motor drive system**
In motor drive applications, HUF75545S3S-VB can be used as a high-current switching element. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive high-power motors, making it suitable for motor control systems that require high current and high reliability.
3. **Power amplifier**
This MOSFET can also be used in power amplifiers, especially in the case of high-power signal processing. Its excellent conduction performance and low on-resistance make it a key component in amplifier design, helping to provide efficient power amplification and signal processing.
4. **High-power load switch**
HUF75545S3S-VB is suitable for high-power load switching applications such as power supply protection and load control circuits. Its low on-resistance and high current capability enable it to stably control high-power loads while effectively protecting circuits from overcurrent and overvoltage.
These application examples demonstrate the superior performance and wide applicability of HUF75545S3S-VB in a variety of high-current and high-power applications, especially in electronic circuits that require high performance and high reliability.
1. **High-power DC-DC converter**
HUF75545S3S-VB is ideal for use in high-power DC-DC converters. Its low on-resistance (6mΩ @ VGS=10V) and high current capability (120A) ensure efficient power conversion and low power loss, making it an excellent performer in high-performance power conversion modules.
2. **Motor drive system**
In motor drive applications, HUF75545S3S-VB can be used as a high-current switching element. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive high-power motors, making it suitable for motor control systems that require high current and high reliability.
3. **Power amplifier**
This MOSFET can also be used in power amplifiers, especially in the case of high-power signal processing. Its excellent conduction performance and low on-resistance make it a key component in amplifier design, helping to provide efficient power amplification and signal processing.
4. **High-power load switch**
HUF75545S3S-VB is suitable for high-power load switching applications such as power supply protection and load control circuits. Its low on-resistance and high current capability enable it to stably control high-power loads while effectively protecting circuits from overcurrent and overvoltage.
These application examples demonstrate the superior performance and wide applicability of HUF75545S3S-VB in a variety of high-current and high-power applications, especially in electronic circuits that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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