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HUF75545S3ST-VB Product details
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Product Introduction
**HUF75545S3ST-VB** is a high-performance N-Channel MOSFET in TO263 package. The maximum drain-source voltage (VDS) of this MOSFET is 80V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. It has a drain-source resistance (RDS(ON)) of 10mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, and can carry a maximum continuous drain current (ID) of up to 120A. Manufactured using Trench technology, the HUF75545S3ST-VB provides excellent switching performance and low conduction losses, making it suitable for a variety of high-power applications.
**HUF75545S3ST-VB** is a high-performance N-Channel MOSFET in TO263 package. The maximum drain-source voltage (VDS) of this MOSFET is 80V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. It has a drain-source resistance (RDS(ON)) of 10mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, and can carry a maximum continuous drain current (ID) of up to 120A. Manufactured using Trench technology, the HUF75545S3ST-VB provides excellent switching performance and low conduction losses, making it suitable for a variety of high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High-power power switch **
HUF75545S3ST-VB is ideal for high-power power switch applications. Its low RDS(ON) characteristics and high current carrying capacity enable it to operate stably under high current conditions, reduce switching losses, and improve system efficiency, especially suitable for power supply and management systems.
**2. High-power DC-DC converter **
In high-power DC-DC converters, this MOSFET can be used as an efficient switching element to handle high current conversion. Its low on-resistance helps reduce energy loss and improve converter efficiency, making it suitable for high power density converter designs.
**3. Electric vehicle (EV) battery management **
HUF75545S3ST-VB is suitable for battery management systems in electric vehicles and can handle high current switching operations. Its high current carrying capacity and low on-resistance ensure efficient and stable current management during battery charging and discharging, improving the reliability of battery management systems.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as a key switching element to handle the conversion and management of high-power power. Its high current handling capability and low conduction loss help improve the performance and efficiency of the UPS system and ensure stable power supply.
**5. Industrial Power Supply and Control System**
HUF75545S3ST-VB is suitable for various industrial power supplies and control systems as a core element for power conversion and control. It can effectively manage high-current loads, provide stable switching control, and meet the requirements of high power and high efficiency in industrial applications.
The design features of this MOSFET enable it to perform well in high-current, high-power applications, and can meet the needs of various high-performance electronic devices.
**1. High-power power switch **
HUF75545S3ST-VB is ideal for high-power power switch applications. Its low RDS(ON) characteristics and high current carrying capacity enable it to operate stably under high current conditions, reduce switching losses, and improve system efficiency, especially suitable for power supply and management systems.
**2. High-power DC-DC converter **
In high-power DC-DC converters, this MOSFET can be used as an efficient switching element to handle high current conversion. Its low on-resistance helps reduce energy loss and improve converter efficiency, making it suitable for high power density converter designs.
**3. Electric vehicle (EV) battery management **
HUF75545S3ST-VB is suitable for battery management systems in electric vehicles and can handle high current switching operations. Its high current carrying capacity and low on-resistance ensure efficient and stable current management during battery charging and discharging, improving the reliability of battery management systems.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as a key switching element to handle the conversion and management of high-power power. Its high current handling capability and low conduction loss help improve the performance and efficiency of the UPS system and ensure stable power supply.
**5. Industrial Power Supply and Control System**
HUF75545S3ST-VB is suitable for various industrial power supplies and control systems as a core element for power conversion and control. It can effectively manage high-current loads, provide stable switching control, and meet the requirements of high power and high efficiency in industrial applications.
The design features of this MOSFET enable it to perform well in high-current, high-power applications, and can meet the needs of various high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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