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HUF75542S3S-VB Product details
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HUF75542S3S-VB MOSFET Product Introduction
HUF75542S3S-VB is a high-performance single N-channel MOSFET in a TO263 package, specially designed to handle high voltage and high current applications. Its 80V drain-source voltage (VDS) and 120A maximum drain current (ID) enable it to excel in scenarios with high power and high efficiency requirements. This MOSFET uses Trench technology to provide low on-resistance, with an on-resistance of 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. These features ensure efficient energy conversion and low power loss when the MOSFET is operated at high currents, while its 3V threshold voltage (Vth) allows efficient conduction at lower gate voltages.
HUF75542S3S-VB is a high-performance single N-channel MOSFET in a TO263 package, specially designed to handle high voltage and high current applications. Its 80V drain-source voltage (VDS) and 120A maximum drain current (ID) enable it to excel in scenarios with high power and high efficiency requirements. This MOSFET uses Trench technology to provide low on-resistance, with an on-resistance of 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. These features ensure efficient energy conversion and low power loss when the MOSFET is operated at high currents, while its 3V threshold voltage (Vth) allows efficient conduction at lower gate voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUF75542S3S-VB Detailed parameter description
1. **Package type**: TO263
The TO263 package provides excellent heat dissipation and surface mounting capabilities, suitable for high-power applications and electronic circuits requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration optimizes circuit design, enabling it to perform well in high-current applications and ensure efficient current transmission.
3. **Drain-source voltage (VDS)**: 80V
Suitable for medium-voltage applications, capable of handling a variety of power management and conversion tasks, ensuring device stability.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range improves the design flexibility of the device and enhances its tolerance to overvoltage.
5. **Threshold voltage (Vth)**: 3V
The moderate threshold voltage ensures that the MOSFET can be turned on at a lower gate-source voltage, thereby improving the switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
The extremely low on-resistance reduces power loss and improves the overall efficiency of the system, especially when operating at high current.
7. **Maximum drain current (ID)**: 120A
The drain current capability of up to 120A makes it suitable for handling high current applications and provides powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and efficient switching performance, suitable for high power and high efficiency application scenarios.
1. **Package type**: TO263
The TO263 package provides excellent heat dissipation and surface mounting capabilities, suitable for high-power applications and electronic circuits requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration optimizes circuit design, enabling it to perform well in high-current applications and ensure efficient current transmission.
3. **Drain-source voltage (VDS)**: 80V
Suitable for medium-voltage applications, capable of handling a variety of power management and conversion tasks, ensuring device stability.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range improves the design flexibility of the device and enhances its tolerance to overvoltage.
5. **Threshold voltage (Vth)**: 3V
The moderate threshold voltage ensures that the MOSFET can be turned on at a lower gate-source voltage, thereby improving the switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
The extremely low on-resistance reduces power loss and improves the overall efficiency of the system, especially when operating at high current.
7. **Maximum drain current (ID)**: 120A
The drain current capability of up to 120A makes it suitable for handling high current applications and provides powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and efficient switching performance, suitable for high power and high efficiency application scenarios.
Domain and module applications：
Application fields and module examples
1. **High-power power converter**: The high current and low on-resistance characteristics of HUF75542S3S-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can improve power conversion efficiency and reduce energy loss. It is suitable for server power supplies and high-power power modules.
2. **Motor drive system**: In motor control applications, this MOSFET can handle high current loads and provide efficient and stable motor drive. It is widely used in industrial automation, power tools and electric vehicles to ensure the reliable operation of the motor.
3. **Battery Management System (BMS)**: HUF75542S3S-VB is suitable for battery management systems. It can efficiently manage the charging and discharging process to ensure the safety and long life of the battery pack. It is widely used in electric vehicles, energy storage systems and portable battery applications.
4. **LED drive circuit**: Due to its high current capability and low power loss characteristics, this MOSFET is also very suitable for use in LED drive circuits, providing stable LED drive current, and is used in high-brightness LED lighting and backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for applications that require high power processing, such as audio amplifiers and broadcasting systems.
6. **Inverter**: The high current capability and low on-resistance of HUF75542S3S-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing reliable power management and conversion.
Through the introduction of these application fields, it can be seen that HUF75542S3S-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
1. **High-power power converter**: The high current and low on-resistance characteristics of HUF75542S3S-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can improve power conversion efficiency and reduce energy loss. It is suitable for server power supplies and high-power power modules.
2. **Motor drive system**: In motor control applications, this MOSFET can handle high current loads and provide efficient and stable motor drive. It is widely used in industrial automation, power tools and electric vehicles to ensure the reliable operation of the motor.
3. **Battery Management System (BMS)**: HUF75542S3S-VB is suitable for battery management systems. It can efficiently manage the charging and discharging process to ensure the safety and long life of the battery pack. It is widely used in electric vehicles, energy storage systems and portable battery applications.
4. **LED drive circuit**: Due to its high current capability and low power loss characteristics, this MOSFET is also very suitable for use in LED drive circuits, providing stable LED drive current, and is used in high-brightness LED lighting and backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for applications that require high power processing, such as audio amplifiers and broadcasting systems.
6. **Inverter**: The high current capability and low on-resistance of HUF75542S3S-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing reliable power management and conversion.
Through the introduction of these application fields, it can be seen that HUF75542S3S-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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