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HUF75345S3S-VB Product details

Product introduction:

1. HUF75345S3S-VB MOSFET Product Introduction

HUF75345S3S-VB is a high-performance single N-channel power MOSFET in TO-263 package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is manufactured based on Trench technology, providing excellent switching characteristics and extremely low on-resistance. Its turn-on voltage (Vth) is 3V, the on-resistance (RDS(ON)) is as low as 4mΩ@VGS=10V, and the maximum drain current (ID) is 150A. These characteristics make the HUF75345S3S-VB excel in applications requiring high efficiency and high current carrying capacity.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. HUF75345S3S-VB MOSFET Detailed parameter description

- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Thermal resistance (RθJC)**: Typical value 1.0°C/W
- **Total gate charge (Qg)**: Typical value 130nC
- **Output capacitance (Coss)**: Typical value 200pF
- **Maximum power dissipation (Ptot)**: Typical value 250W (at Tc = 25°C)
- **Drain-source breakdown voltage (V(BR)DSS)**: 60V

Domain and module applications:

III. HUF75345S3S-VB MOSFET Application Fields and Module Examples

1. **Power Converter**: HUF75345S3S-VB is ideal for high-efficiency power converters such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can significantly improve power conversion efficiency and reduce energy loss, and is suitable for power management systems that require high power and high efficiency.

2. **Motor Drive System**: In high-power DC motor drive and stepper motor control systems, HUF75345S3S-VB provides excellent switching performance and strong current handling capability. Its low on-resistance helps reduce power loss and improve the overall efficiency and reliability of the motor drive system, and is suitable for motor drive applications in the industrial and automation fields.

3. **LED Lighting**: In high-power LED lighting drive circuits, this MOSFET can effectively manage large currents to ensure efficient energy conversion and stable operation of LED modules. Its low on-resistance reduces heat generation, improving the light output and service life of LED lamps.

4. **Automotive Electronics**: HUF75345S3S-VB is suitable for high current applications in automotive electronic systems, such as power windows, seat adjustments and on-board power management modules. Its high current capability and low on-resistance ensure stable and efficient switching performance in the automotive environment, enhancing the reliability and durability of automotive systems.

HUF75345S3S-VB is a high-performance power MOSFET suitable for a variety of applications such as power management, motor drive, LED lighting and automotive electronics, and can meet the needs of high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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