HUF75345S3ST-VB Product details
Product introduction:
**HUF75345S3ST-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET utilizes advanced Trench technology and has very low on-resistance and excellent switching performance. Its maximum drain-source voltage is 60V and it can withstand a continuous current of up to 150A, making it very suitable for high-power applications. The gate threshold voltage is 3V, ensuring stable operation at lower gate drive voltages, which makes it perform well in applications requiring high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: HUF75345S3ST-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
1. **High-power power modules**: The extremely low on-resistance and high current carrying capacity of HUF75345S3ST-VB make it an ideal choice for high-power power modules, such as efficient DC-DC converters and AC-DC adapters. It can significantly reduce power losses and improve system efficiency and stability.
2. **Motor drive systems**: This MOSFET performs well in motor control applications, especially for driving high-current DC motors and stepper motors. Its low on-resistance and high current handling capability can improve the efficiency of motor drive systems, reduce heat generation, and enhance system reliability.
3. **Automotive electronics**: HUF75345S3ST-VB is an important component in automotive electronic systems, such as battery management systems, electric vehicle drive modules, and motor controllers. Its high current carrying capacity and low on-resistance ensure high efficiency and long-term reliable operation in automotive applications.
4. **Renewable Energy Applications**: The high efficiency and low on-resistance of this MOSFET make it an ideal choice for renewable energy devices such as solar inverters and wind power generation systems, helping to improve energy conversion efficiency and enhance system performance.
5. **Uninterruptible Power Supplies (UPS) and Power Conditioning Equipment**: Due to its excellent power handling capability and low on-resistance, the HUF75345S3ST-VB is suitable for uninterruptible power supplies (UPS) and other power conditioning equipment. These applications require efficient power management and stable performance, and this MOSFET can provide reliable support.
These application examples show the wide applicability of the HUF75345S3ST-VB MOSFET in high-power and high-efficiency circuits, especially those that need to handle large currents and high efficiency.
Technical support:
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