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HUF75344S3S-VB Product details
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Product Introduction
**Model: HUF75344S3S-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 60V**
**VGS: ±20V**
**Vth: 3V**
**RDS(ON) @ VGS=10V: 4mΩ**
**ID: 150A**
**Technology: Trench**
HUF75344S3S-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed for high current applications with extremely low on-resistance and high current carrying capability. Using Trench technology, the MOSFET can operate stably under high current and high power conditions, and is suitable for circuits requiring high performance and low power consumption.
**Model: HUF75344S3S-VB**
**Package: TO263**
**Configuration: Single N-channel**
**VDS: 60V**
**VGS: ±20V**
**Vth: 3V**
**RDS(ON) @ VGS=10V: 4mΩ**
**ID: 150A**
**Technology: Trench**
HUF75344S3S-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed for high current applications with extremely low on-resistance and high current carrying capability. Using Trench technology, the MOSFET can operate stably under high current and high power conditions, and is suitable for circuits requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=10V: 4mΩ
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=10V: 4mΩ
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power DC-DC converter**
HUF75344S3S-VB is ideal for use in high-power DC-DC converters. Due to its extremely low on-resistance (4mΩ) and high current capability (150A), it can significantly improve conversion efficiency and effectively reduce power loss and heat generation, thereby improving the overall performance of the system.
2. **Motor drive system**
In motor drive applications, HUF75344S3S-VB can be used as a switch control element, especially under high current load conditions. Its high current handling capability and low RDS(ON) characteristics enable it to drive the motor efficiently, ensuring smooth and reliable operation.
3. **Power amplifier**
This MOSFET is suitable for the design of power amplifiers, especially when high-power signals need to be processed. Its low on-resistance and high current capability make it an ideal choice for handling key switches in high-power amplifiers, providing efficient power conversion and signal amplification.
4. **High-power load switch**
HUF75344S3S-VB can also be used in high-power load switches, such as power management systems or power protection circuits. Its low on-resistance and high current capability ensure that high-power loads can be stably controlled, protecting circuits from overcurrent or overvoltage, and improving system reliability and safety.
These application examples demonstrate the superior performance and wide applicability of HUF75344S3S-VB in high-current and high-power environments, especially in electronic circuit designs that require high performance and high reliability.
1. **High-power DC-DC converter**
HUF75344S3S-VB is ideal for use in high-power DC-DC converters. Due to its extremely low on-resistance (4mΩ) and high current capability (150A), it can significantly improve conversion efficiency and effectively reduce power loss and heat generation, thereby improving the overall performance of the system.
2. **Motor drive system**
In motor drive applications, HUF75344S3S-VB can be used as a switch control element, especially under high current load conditions. Its high current handling capability and low RDS(ON) characteristics enable it to drive the motor efficiently, ensuring smooth and reliable operation.
3. **Power amplifier**
This MOSFET is suitable for the design of power amplifiers, especially when high-power signals need to be processed. Its low on-resistance and high current capability make it an ideal choice for handling key switches in high-power amplifiers, providing efficient power conversion and signal amplification.
4. **High-power load switch**
HUF75344S3S-VB can also be used in high-power load switches, such as power management systems or power protection circuits. Its low on-resistance and high current capability ensure that high-power loads can be stably controlled, protecting circuits from overcurrent or overvoltage, and improving system reliability and safety.
These application examples demonstrate the superior performance and wide applicability of HUF75344S3S-VB in high-current and high-power environments, especially in electronic circuit designs that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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