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HUF75344S3ST-VB Product details
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Product Introduction
**HUF75344S3ST-VB** is a high-performance N-Channel MOSFET in a TO263 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. It has a drain-source resistance (RDS(ON)) of only 4mΩ at VGS = 10V and can carry a maximum continuous drain current (ID) of up to 150A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it suitable for applications requiring high current and high efficiency.
**HUF75344S3ST-VB** is a high-performance N-Channel MOSFET in a TO263 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. It has a drain-source resistance (RDS(ON)) of only 4mΩ at VGS = 10V and can carry a maximum continuous drain current (ID) of up to 150A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High-power power switch **
HUF75344S3ST-VB is ideal for high-power power switch applications. Its low RDS(ON) and high current carrying capacity enable stable operation under high current conditions, reducing switching losses and thus improving the efficiency of the overall power system.
**2. High-power DC-DC converter **
In high-power DC-DC converters, this MOSFET can be used as a switching element to handle the conversion of high currents. Its low on-resistance helps reduce energy losses and improve the efficiency of the converter, especially for applications requiring high power density.
**3. Electric vehicle (EV) battery management system **
HUF75344S3ST-VB can be used in the battery management system of electric vehicles to handle the switching of high current loads. Its high current capability and low RDS(ON) characteristics ensure efficient current management during battery charging and discharging, improving the performance and reliability of the battery management system.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as the main switching component to handle the switching and management of high-power power. Its high current carrying capacity and low conduction loss ensure the efficient operation of the UPS system and provide stable power supply guarantee.
**5. Industrial Power Supply and Control System**
HUF75344S3ST-VB is suitable for various industrial power supplies and control systems as a key switching element. It can handle high current loads and provide stable switching control to meet the strict requirements of power management in industrial environments.
The design features of this MOSFET enable it to perform well in high-current, high-power applications, and can meet the needs of various electronic devices requiring high efficiency and high performance.
**1. High-power power switch **
HUF75344S3ST-VB is ideal for high-power power switch applications. Its low RDS(ON) and high current carrying capacity enable stable operation under high current conditions, reducing switching losses and thus improving the efficiency of the overall power system.
**2. High-power DC-DC converter **
In high-power DC-DC converters, this MOSFET can be used as a switching element to handle the conversion of high currents. Its low on-resistance helps reduce energy losses and improve the efficiency of the converter, especially for applications requiring high power density.
**3. Electric vehicle (EV) battery management system **
HUF75344S3ST-VB can be used in the battery management system of electric vehicles to handle the switching of high current loads. Its high current capability and low RDS(ON) characteristics ensure efficient current management during battery charging and discharging, improving the performance and reliability of the battery management system.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as the main switching component to handle the switching and management of high-power power. Its high current carrying capacity and low conduction loss ensure the efficient operation of the UPS system and provide stable power supply guarantee.
**5. Industrial Power Supply and Control System**
HUF75344S3ST-VB is suitable for various industrial power supplies and control systems as a key switching element. It can handle high current loads and provide stable switching control to meet the strict requirements of power management in industrial environments.
The design features of this MOSFET enable it to perform well in high-current, high-power applications, and can meet the needs of various electronic devices requiring high efficiency and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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