HUF75343S3-VB Product details
Product introduction:
HUF75343S3-VB is a single N-channel power MOSFET in TO262 package, designed for applications requiring high current and high efficiency. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3.5V, and its on-resistance (RDS(ON)) is 3mΩ at a VGS of 10V, which enables it to effectively reduce power consumption and heat generation under high current conditions. Its maximum drain current (ID) is up to 210A, which is suitable for handling high current applications. HUF75343S3-VB uses Trench technology to provide lower on-resistance and higher switching efficiency, making it an ideal choice for high-power and high-efficiency power electronics systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications:
The high current handling capability and low on-resistance of HUF75343S3-VB MOSFET make it very suitable for the following fields and modules:
1. **High Power Power Management**: In high power DC-DC converters and switching power supplies, the low on-resistance and high current capability of this MOSFET can significantly improve power efficiency, reduce energy loss and heat generation, and is suitable for the design of power modules and high power converters.
2. **Electric Vehicle Drive System**: The high drain current capability of HUF75343S3-VB makes it excellent in the motor drive system of electric vehicles. It can efficiently handle the high current demand during motor startup and operation, ensuring the stability and reliability of the power system of electric vehicles.
3. **Battery Management System (BMS)**: In the battery management system, this MOSFET can effectively control the high current charging and discharging process, ensure the safety and stability of the battery in high power applications, and improve the battery life and performance.
4. **Uninterruptible Power Supply (UPS) System**: Due to its high current handling capability, HUF75343S3-VB can be used as a key switch component in UPS systems, ensuring that the system can quickly switch and provide reliable power supply when the power is interrupted.
5. **Industrial Power Control**: In industrial power control systems, this MOSFET can handle high current loads, such as power inverters and high-power electric equipment, ensuring stable operation and high efficiency of the system under high load conditions.
These application areas fully demonstrate the superior performance of HUF75343S3-VB, making it a key component in various high-current, high-efficiency power electronic systems.
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