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HUF75343S3S-VB Product details
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HUF75343S3S-VB Product Introduction
HUF75343S3S-VB is a high current, high efficiency single N-channel power MOSFET in TO263 package. The device is designed to handle high current switching applications and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V and its on-resistance (RDS(ON)) is 4mΩ at a VGS of 10V, which can provide extremely low power consumption under high current conditions. The maximum continuous drain current (ID) of HUF75343S3S-VB is up to 150A. It uses Trench technology to ensure excellent switching performance and low conduction losses, making it very suitable for high power and high efficiency applications.
HUF75343S3S-VB is a high current, high efficiency single N-channel power MOSFET in TO263 package. The device is designed to handle high current switching applications and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V and its on-resistance (RDS(ON)) is 4mΩ at a VGS of 10V, which can provide extremely low power consumption under high current conditions. The maximum continuous drain current (ID) of HUF75343S3S-VB is up to 150A. It uses Trench technology to ensure excellent switching performance and low conduction losses, making it very suitable for high power and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUF75343S3S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
HUF75343S3S-VB Applications and Modules
HUF75343S3S-VB MOSFET is very suitable for **high-power switching power supplies** (SMPS), such as high-power DC-DC converters and high-efficiency AC-DC power modules, due to its extremely low on-resistance and high current carrying capacity. This makes it excel in **motor drive systems**, such as electric vehicles (EVs) and industrial motor controllers, which can effectively improve system efficiency and stability. In addition, the device is also a key power switching element in **battery management systems** (BMS) and **power distribution units** (PDUs), ensuring the reliability and low power consumption of high current transmission. The high current capability and low conduction loss of HUF75343S3S-VB also make it suitable for **high-power power modules** and **fast switching applications**, providing support for a variety of applications that require efficient energy conversion and management.
HUF75343S3S-VB MOSFET is very suitable for **high-power switching power supplies** (SMPS), such as high-power DC-DC converters and high-efficiency AC-DC power modules, due to its extremely low on-resistance and high current carrying capacity. This makes it excel in **motor drive systems**, such as electric vehicles (EVs) and industrial motor controllers, which can effectively improve system efficiency and stability. In addition, the device is also a key power switching element in **battery management systems** (BMS) and **power distribution units** (PDUs), ensuring the reliability and low power consumption of high current transmission. The high current capability and low conduction loss of HUF75343S3S-VB also make it suitable for **high-power power modules** and **fast switching applications**, providing support for a variety of applications that require efficient energy conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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