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HUF75333S3-VB Product details
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Product Introduction
**HUF75333S3-VB** is a high-performance N-Channel MOSFET in a TO262 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3.5V. It has an extremely low drain-source resistance (RDS(ON)) of only 3mΩ at VGS = 10V and can carry a maximum continuous drain current (ID) of up to 210A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it suitable for high-current, high-efficiency applications.
**HUF75333S3-VB** is a high-performance N-Channel MOSFET in a TO262 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3.5V. It has an extremely low drain-source resistance (RDS(ON)) of only 3mΩ at VGS = 10V and can carry a maximum continuous drain current (ID) of up to 210A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it suitable for high-current, high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. Electric vehicle (EV) power management
HUF75333S3-VB is ideal for use in power management systems for electric vehicles, especially modules that need to handle high currents. Its low RDS(ON) and high current carrying capacity enable it to effectively reduce energy losses and improve overall efficiency in battery management and power distribution systems.
**2. High-power motor drive
In high-power motor drive applications, this MOSFET can be used as a switching element to support high current requirements. Its high current carrying characteristics and low on-resistance ensure high efficiency and stability of the motor during startup and operation.
**3. High-power DC-DC converters
HUF75333S3-VB can be used in high-power DC-DC converters to provide stable power conversion. Its low RDS(ON) characteristics can reduce conduction losses during the conversion process and improve efficiency, especially suitable for high-current, high-power conversion scenarios.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as the main switching element to handle the conversion and distribution of large currents. Its high current capability and low conduction loss help improve system reliability and efficiency.
**5. Industrial Power and Control Systems**
HUF75333S3-VB is suitable for use in industrial power and control systems as a key power conversion and control element. Its strong current handling capability and low on-resistance enable it to provide stable and efficient power control in industrial environments.
The design features of this MOSFET make it perform particularly well in applications that require high current and high efficiency, meeting the performance requirements of various high-power electronic devices.
**1. Electric vehicle (EV) power management
HUF75333S3-VB is ideal for use in power management systems for electric vehicles, especially modules that need to handle high currents. Its low RDS(ON) and high current carrying capacity enable it to effectively reduce energy losses and improve overall efficiency in battery management and power distribution systems.
**2. High-power motor drive
In high-power motor drive applications, this MOSFET can be used as a switching element to support high current requirements. Its high current carrying characteristics and low on-resistance ensure high efficiency and stability of the motor during startup and operation.
**3. High-power DC-DC converters
HUF75333S3-VB can be used in high-power DC-DC converters to provide stable power conversion. Its low RDS(ON) characteristics can reduce conduction losses during the conversion process and improve efficiency, especially suitable for high-current, high-power conversion scenarios.
**4. Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, this MOSFET can be used as the main switching element to handle the conversion and distribution of large currents. Its high current capability and low conduction loss help improve system reliability and efficiency.
**5. Industrial Power and Control Systems**
HUF75333S3-VB is suitable for use in industrial power and control systems as a key power conversion and control element. Its strong current handling capability and low on-resistance enable it to provide stable and efficient power control in industrial environments.
The design features of this MOSFET make it perform particularly well in applications that require high current and high efficiency, meeting the performance requirements of various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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