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HUF75333S3S-VB Product details
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HUF75333S3S-VB MOSFET Product Introduction
HUF75333S3S-VB is a high-performance single N-channel MOSFET in a TO263 package, designed to handle applications with high current and low on-resistance. Its 60V drain-source voltage (VDS) and 75A maximum drain current (ID) make it ideal for high-power applications. This MOSFET combines advanced Trench technology to provide low on-resistance at different gate-source voltages: 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. The device's low threshold voltage (Vth) of 1.7V ensures fast switching response and efficient energy conversion.
HUF75333S3S-VB is a high-performance single N-channel MOSFET in a TO263 package, designed to handle applications with high current and low on-resistance. Its 60V drain-source voltage (VDS) and 75A maximum drain current (ID) make it ideal for high-power applications. This MOSFET combines advanced Trench technology to provide low on-resistance at different gate-source voltages: 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. The device's low threshold voltage (Vth) of 1.7V ensures fast switching response and efficient energy conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUF75333S3S-VB Detailed parameter description
1. **Package type**: TO263
TO263 package provides good heat dissipation and high current handling capability, suitable for surface mount applications.
2. **Configuration**: Single N-channel
Single N-channel configuration simplifies circuit design and provides efficient current transfer.
3. **Drain-source voltage (VDS)**: 60V
Suitable for medium voltage applications, ensuring stable operation of the device in a variety of power management and conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
Wide gate voltage range brings greater design flexibility and improves ruggedness.
5. **Threshold voltage (Vth)**: 1.7V
Low threshold voltage allows the MOSFET to turn on at a lower gate voltage, improving switching speed and efficiency.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
The extremely low on-resistance reduces power loss and improves overall efficiency, especially under high current operation.
7. **Maximum drain current (ID)**: 75A
The drain current capability of up to 75A makes it suitable for applications with high current requirements and provides excellent power handling capabilities.
8. **Technology**: Trench
Trench technology effectively reduces on-resistance and improves the switching efficiency and thermal management capabilities of the MOSFET.
1. **Package type**: TO263
TO263 package provides good heat dissipation and high current handling capability, suitable for surface mount applications.
2. **Configuration**: Single N-channel
Single N-channel configuration simplifies circuit design and provides efficient current transfer.
3. **Drain-source voltage (VDS)**: 60V
Suitable for medium voltage applications, ensuring stable operation of the device in a variety of power management and conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
Wide gate voltage range brings greater design flexibility and improves ruggedness.
5. **Threshold voltage (Vth)**: 1.7V
Low threshold voltage allows the MOSFET to turn on at a lower gate voltage, improving switching speed and efficiency.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
The extremely low on-resistance reduces power loss and improves overall efficiency, especially under high current operation.
7. **Maximum drain current (ID)**: 75A
The drain current capability of up to 75A makes it suitable for applications with high current requirements and provides excellent power handling capabilities.
8. **Technology**: Trench
Trench technology effectively reduces on-resistance and improves the switching efficiency and thermal management capabilities of the MOSFET.
Domain and module applications：
Application fields and module examples
1. **Power converter**: The high current and low on-resistance characteristics of HUF75333S3S-VB make it excellent in power converters such as DC-DC converters and AC-DC power adapters, which can significantly improve power conversion efficiency and reduce heat generation.
2. **Motor controller**: In motor control systems, this MOSFET can handle large current loads, provide efficient current transmission and stable motor drive, and is widely used in industrial automation and home appliances.
3. **Power tools**: Due to its high current handling capability and high efficiency, HUF75333S3S-VB is particularly suitable for use in power tools, providing continuous and stable power output and improving tool durability.
4. **Battery management system (BMS)**: In battery management systems, this MOSFET can be used to efficiently control the charging and discharging process to ensure the safety and life of the battery, suitable for electric vehicles and portable devices.
5. **Lighting control**: HUF75333S3S-VB can also be used in LED drive circuits to provide efficient current management, ensuring high efficiency and long life of LED lamps.
6. **Inverter**: In the inverter system, the high current capability and low on-resistance of this MOSFET ensure efficient power conversion, suitable for high-efficiency application scenarios such as solar inverters and UPS systems.
In summary, HUF75333S3S-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and wide adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
1. **Power converter**: The high current and low on-resistance characteristics of HUF75333S3S-VB make it excellent in power converters such as DC-DC converters and AC-DC power adapters, which can significantly improve power conversion efficiency and reduce heat generation.
2. **Motor controller**: In motor control systems, this MOSFET can handle large current loads, provide efficient current transmission and stable motor drive, and is widely used in industrial automation and home appliances.
3. **Power tools**: Due to its high current handling capability and high efficiency, HUF75333S3S-VB is particularly suitable for use in power tools, providing continuous and stable power output and improving tool durability.
4. **Battery management system (BMS)**: In battery management systems, this MOSFET can be used to efficiently control the charging and discharging process to ensure the safety and life of the battery, suitable for electric vehicles and portable devices.
5. **Lighting control**: HUF75333S3S-VB can also be used in LED drive circuits to provide efficient current management, ensuring high efficiency and long life of LED lamps.
6. **Inverter**: In the inverter system, the high current capability and low on-resistance of this MOSFET ensure efficient power conversion, suitable for high-efficiency application scenarios such as solar inverters and UPS systems.
In summary, HUF75333S3S-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and wide adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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