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HUF75333S3ST-VB Product details
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1. Product Introduction
HUF75333S3ST-VB is a single N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a variety of power electronic systems. Its on-resistance (RDS(ON)) is 12mΩ at a VGS of 4.5V, and drops to 11mΩ at a VGS of 10V. This low on-resistance enables the HUF75333S3ST-VB to provide excellent switching performance under high current conditions, with a maximum drain current (ID) of 75A. This MOSFET uses advanced Trench technology to achieve high efficiency and reliability, and is ideal for power management and high power applications.
HUF75333S3ST-VB is a single N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a variety of power electronic systems. Its on-resistance (RDS(ON)) is 12mΩ at a VGS of 4.5V, and drops to 11mΩ at a VGS of 10V. This low on-resistance enables the HUF75333S3ST-VB to provide excellent switching performance under high current conditions, with a maximum drain current (ID) of 75A. This MOSFET uses advanced Trench technology to achieve high efficiency and reliability, and is ideal for power management and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 11mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 11mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
3. Application fields and modules
HUF75333S3ST-VB MOSFET is widely used in the following fields and modules due to its high current capability and low on-resistance:
1. **Power management system**: In DC-DC converters and switching power supplies, HUF75333S3ST-VB can be used for efficient power conversion. Its low on-resistance helps reduce energy loss and improve overall system efficiency. It is particularly suitable for power management applications with high power output.
2. **Electric vehicles and industrial motor drives**: This MOSFET can be used in motor control modules in electric vehicles and high-power motor drives in industrial automation. Its high drain current capability ensures efficient operation of the motor while ensuring system stability and reliability.
3. **Uninterruptible power supply (UPS) system**: In UPS systems, HUF75333S3ST-VB can be used as the main switching element to ensure that the equipment can smoothly switch to the backup power supply to provide continuous power supply when the power is interrupted.
4. **Battery Management System (BMS)**: In high current demand battery management systems, HUF75333S3ST-VB can effectively control the battery charge and discharge process, extend battery life, and improve system safety and stability.
These features make HUF75333S3ST-VB a key device in efficient and high reliability power electronic systems, especially in applications requiring high current handling capabilities.
HUF75333S3ST-VB MOSFET is widely used in the following fields and modules due to its high current capability and low on-resistance:
1. **Power management system**: In DC-DC converters and switching power supplies, HUF75333S3ST-VB can be used for efficient power conversion. Its low on-resistance helps reduce energy loss and improve overall system efficiency. It is particularly suitable for power management applications with high power output.
2. **Electric vehicles and industrial motor drives**: This MOSFET can be used in motor control modules in electric vehicles and high-power motor drives in industrial automation. Its high drain current capability ensures efficient operation of the motor while ensuring system stability and reliability.
3. **Uninterruptible power supply (UPS) system**: In UPS systems, HUF75333S3ST-VB can be used as the main switching element to ensure that the equipment can smoothly switch to the backup power supply to provide continuous power supply when the power is interrupted.
4. **Battery Management System (BMS)**: In high current demand battery management systems, HUF75333S3ST-VB can effectively control the battery charge and discharge process, extend battery life, and improve system safety and stability.
These features make HUF75333S3ST-VB a key device in efficient and high reliability power electronic systems, especially in applications requiring high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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