Featured Model

Last updated:

HUF75332S3S-VB Product details

Product introduction:

Product Introduction

**HUF75332S3S-VB** is a high-performance single N-channel MOSFET in a TO-263 package, particularly suitable for applications requiring high current and low on-resistance. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with a wide operating voltage range. Its turn-on voltage (Vth) is 1.7V, ensuring excellent switching performance. At VGS=4.5V, the on-resistance (RDS(ON)) of the MOSFET is 12mΩ, and at VGS=10V, the on-resistance drops to 11mΩ, showing extremely low conduction losses. The maximum continuous drain current (ID) is 75A. HUF75332S3S-VB uses advanced Trench technology, providing excellent electrical performance and reliability, and is very suitable for high-power, high-efficiency application scenarios.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 75A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Parameter description

1. **Model**: HUF75332S3S-VB
2. **Package type**: TO-263
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 60V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 1.7V
7. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 75A
9. **Technology**: Trench

Domain and module applications:

Applications and modules

**HUF75332S3S-VB** is suitable for the following applications and modules due to its excellent electrical performance and high current capability:

1. **Power management system**: In high-efficiency switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of HUF75332S3S-VB make it an ideal choice. It can effectively reduce power loss and improve overall system efficiency, and is widely used in computer power supplies, communication equipment power supplies, and industrial power systems.

2. **Motor drive module**: This MOSFET performs well in motor control applications and is suitable for motor drive modules in power tools, electric vehicles, and industrial automation. It can provide stable current control and efficient switching performance to ensure system reliability and high efficiency.

3. **Power amplifier**: In audio power amplifiers and other amplifier applications that need to handle high currents, HUF75332S3S-VB can provide efficient current transfer and low heat generation, and is suitable for power amplifier modules in high-quality audio equipment and communication systems.

4. **Lighting control**: This MOSFET also performs well in LED drive circuits, enabling efficient energy conversion and reliable drive control, making it very suitable for use in LED lighting systems and smart lighting control modules.

**HUF75332S3S-VB** demonstrates its superior performance and efficient operation capabilities through its performance in these applications, and can meet the needs of a variety of high-power, high-efficiency scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat