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HUF75329S3S-VB Product details
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HUF75329S3S-VB MOSFET Product Introduction
**HUF75329S3S-VB** is a high-performance N-Channel MOSFET with a TO263 package type. It uses advanced Trench technology and has excellent conduction characteristics and switching performance. The maximum drain-source voltage of this MOSFET is 60V, and it can withstand a continuous current of up to 50A, making it suitable for circuits that require high current and low on-resistance. Its gate threshold voltage is 1.7V, which allows it to turn on at a lower gate drive voltage, further improving its performance in low-voltage applications.
**HUF75329S3S-VB** is a high-performance N-Channel MOSFET with a TO263 package type. It uses advanced Trench technology and has excellent conduction characteristics and switching performance. The maximum drain-source voltage of this MOSFET is 60V, and it can withstand a continuous current of up to 50A, making it suitable for circuits that require high current and low on-resistance. Its gate threshold voltage is 1.7V, which allows it to turn on at a lower gate drive voltage, further improving its performance in low-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: HUF75329S3S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: HUF75329S3S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Converters**: The low on-resistance and high current handling capability of the HUF75329S3S-VB MOSFET make it ideal for use in power converters, especially in DC-DC converters and AC-DC adapters. It can effectively reduce power losses and improve system efficiency and stability.
2. **Motor Drive**: In motor drive systems, especially for controlling DC motors or stepper motors, the HUF75329S3S-VB is able to handle larger current loads while keeping heat generation low, thereby improving the efficiency and reliability of the motor drive system.
3. **Automotive Electronics**: Due to its excellent switching characteristics and high current carrying capability, this MOSFET is suitable for automotive electronic systems such as battery management systems and motor control modules. Its high current handling capability ensures reliable performance in automotive environments.
4. **LED Driver**: In the LED driver circuit, HUF75329S3S-VB can provide stable current and voltage to effectively drive the LED to ensure its normal operation. Low on-resistance reduces power loss and improves the efficiency of the LED driver.
5. **Battery Management System**: In battery management and charging systems, the low on-resistance of this MOSFET can significantly improve the efficiency of the system, especially in application scenarios that require efficient current switching, such as chargers and protection circuits.
These application examples show the wide applicability of HUF75329S3S-VB MOSFET in various high-efficiency circuits.
1. **Power Converters**: The low on-resistance and high current handling capability of the HUF75329S3S-VB MOSFET make it ideal for use in power converters, especially in DC-DC converters and AC-DC adapters. It can effectively reduce power losses and improve system efficiency and stability.
2. **Motor Drive**: In motor drive systems, especially for controlling DC motors or stepper motors, the HUF75329S3S-VB is able to handle larger current loads while keeping heat generation low, thereby improving the efficiency and reliability of the motor drive system.
3. **Automotive Electronics**: Due to its excellent switching characteristics and high current carrying capability, this MOSFET is suitable for automotive electronic systems such as battery management systems and motor control modules. Its high current handling capability ensures reliable performance in automotive environments.
4. **LED Driver**: In the LED driver circuit, HUF75329S3S-VB can provide stable current and voltage to effectively drive the LED to ensure its normal operation. Low on-resistance reduces power loss and improves the efficiency of the LED driver.
5. **Battery Management System**: In battery management and charging systems, the low on-resistance of this MOSFET can significantly improve the efficiency of the system, especially in application scenarios that require efficient current switching, such as chargers and protection circuits.
These application examples show the wide applicability of HUF75329S3S-VB MOSFET in various high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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