HUF75329G3-VB Product details
Product introduction:
**Model: HUF75329G3-VB**
**Package: TO247**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75329G3-VB is a high-performance N-Channel MOSFET in TO247 package. It uses Trench technology to provide extremely low on-resistance and high current handling capability, which is very suitable for high power and high efficiency applications. The excellent performance of this MOSFET makes it excel in a variety of high current switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package:** TO247
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 60V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 2.5V
- **RDS(ON) (on-resistance):** 7mΩ @ VGS = 10V
- **ID (maximum continuous current):** 150A
- **Technology:** Trench
Domain and module applications:
HUF75329G3-VB is mainly suitable for the following fields and modules:
1. **High-power switching circuits:** Due to its continuous current capability of up to 150A and low on-resistance of 7mΩ, this MOSFET is very suitable for high-power switching circuits. It can efficiently control large current loads and is suitable for power converters and power management systems.
2. **Motor drive:** In motor drive applications, HUF75329G3-VB can be used to control the switching of the motor and provide efficient current transmission. Its low RDS(ON) helps to reduce power loss and improve the overall efficiency of the motor drive system.
3. **DC-DC converter:** This MOSFET can be used as a switching element in a DC-DC converter. Its high current handling capability and low on-resistance make it perform well in the power conversion process and can effectively improve the conversion efficiency.
4. **Power Amplifier:** In power amplifier design, HUF75329G3-VB is able to support high power output and maintain high efficiency of the system due to its high current capability and low on-resistance. It performs well in applications such as audio amplifiers and RF amplifiers.
5. **Automotive Electronics:** In automotive electronic systems such as battery management and power distribution systems, this MOSFET is able to handle high currents and maintain stability. Its high performance characteristics make it suitable for use in the power control and protection circuits of automobiles.
In summary, HUF75329G3-VB, with its high current handling capability and low on-resistance, is suitable for a variety of high-power applications, especially in power management and drive circuits that require high efficiency and high reliability.
Technical support:
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