Featured Model

Last updated:

HUF75329G3-VB Product details

Product introduction:

Product Introduction

**Model: HUF75329G3-VB**

**Package: TO247**

**Configuration: Single N-Channel**

**Technology: Trench**

HUF75329G3-VB is a high-performance N-Channel MOSFET in TO247 package. It uses Trench technology to provide extremely low on-resistance and high current handling capability, which is very suitable for high power and high efficiency applications. The excellent performance of this MOSFET makes it excel in a variety of high current switching applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 60V 2.5V 150A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 60V 2.5V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 60V 2.5V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Package:** TO247
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 60V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 2.5V
- **RDS(ON) (on-resistance):** 7mΩ @ VGS = 10V
- **ID (maximum continuous current):** 150A
- **Technology:** Trench

Domain and module applications:

Application fields and modules

HUF75329G3-VB is mainly suitable for the following fields and modules:

1. **High-power switching circuits:** Due to its continuous current capability of up to 150A and low on-resistance of 7mΩ, this MOSFET is very suitable for high-power switching circuits. It can efficiently control large current loads and is suitable for power converters and power management systems.

2. **Motor drive:** In motor drive applications, HUF75329G3-VB can be used to control the switching of the motor and provide efficient current transmission. Its low RDS(ON) helps to reduce power loss and improve the overall efficiency of the motor drive system.

3. **DC-DC converter:** This MOSFET can be used as a switching element in a DC-DC converter. Its high current handling capability and low on-resistance make it perform well in the power conversion process and can effectively improve the conversion efficiency.

4. **Power Amplifier:** In power amplifier design, HUF75329G3-VB is able to support high power output and maintain high efficiency of the system due to its high current capability and low on-resistance. It performs well in applications such as audio amplifiers and RF amplifiers.

5. **Automotive Electronics:** In automotive electronic systems such as battery management and power distribution systems, this MOSFET is able to handle high currents and maintain stability. Its high performance characteristics make it suitable for use in the power control and protection circuits of automobiles.

In summary, HUF75329G3-VB, with its high current handling capability and low on-resistance, is suitable for a variety of high-power applications, especially in power management and drive circuits that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat