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HUF75309T3ST-VB Product details
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Product Introduction
**HUF75309T3ST-VB** is a high-performance N-Channel MOSFET in a SOT223 package. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 1.7V, and the drain-source resistance (RDS(ON)) is 33mΩ at VGS = 4.5V and 28mΩ at VGS = 10V. The maximum continuous drain current (ID) is 7A. Manufactured using Trench technology, this MOSFET provides excellent switching performance and efficient conduction capability.
**HUF75309T3ST-VB** is a high-performance N-Channel MOSFET in a SOT223 package. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 1.7V, and the drain-source resistance (RDS(ON)) is 33mΩ at VGS = 4.5V and 28mΩ at VGS = 10V. The maximum continuous drain current (ID) is 7A. Manufactured using Trench technology, this MOSFET provides excellent switching performance and efficient conduction capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: Trench
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. Power switch **
HUF75309T3ST-VB can be used as a power switch in various power management systems. Its low RDS(ON) characteristics help reduce power consumption and improve the overall efficiency of the system. Under high current conditions, the low on-resistance of the MOSFET can effectively reduce conduction losses.
**2. DC-DC converter **
In DC-DC converters, this MOSFET can be used for efficient switching control and is suitable for conversion applications requiring medium current and high efficiency. Its Trench technology provides excellent switching performance and low switching losses.
**3. Motor drive **
HUF75309T3ST-VB is suitable for use as a switching element in motor drives. Its high current handling capability and low RDS(ON) can effectively control the start-up and operation of the motor and improve the overall efficiency of the motor drive system.
**4. Load switch**
In load switch applications, this MOSFET can stably control the switching of the load power supply. Its low on-resistance and high current carrying capacity make it suitable for various load switch modules to provide reliable switching control.
**5. Low-power power management**
HUF75309T3ST-VB can be used in low-power power management applications such as mobile devices and portable electronics. Its efficient conduction capability and low conduction loss can help extend the battery life of the device and improve energy efficiency.
The design features of this MOSFET enable it to perform well in applications requiring high efficiency, high current and low power consumption, and can meet the performance requirements of a variety of electronic devices.
**1. Power switch **
HUF75309T3ST-VB can be used as a power switch in various power management systems. Its low RDS(ON) characteristics help reduce power consumption and improve the overall efficiency of the system. Under high current conditions, the low on-resistance of the MOSFET can effectively reduce conduction losses.
**2. DC-DC converter **
In DC-DC converters, this MOSFET can be used for efficient switching control and is suitable for conversion applications requiring medium current and high efficiency. Its Trench technology provides excellent switching performance and low switching losses.
**3. Motor drive **
HUF75309T3ST-VB is suitable for use as a switching element in motor drives. Its high current handling capability and low RDS(ON) can effectively control the start-up and operation of the motor and improve the overall efficiency of the motor drive system.
**4. Load switch**
In load switch applications, this MOSFET can stably control the switching of the load power supply. Its low on-resistance and high current carrying capacity make it suitable for various load switch modules to provide reliable switching control.
**5. Low-power power management**
HUF75309T3ST-VB can be used in low-power power management applications such as mobile devices and portable electronics. Its efficient conduction capability and low conduction loss can help extend the battery life of the device and improve energy efficiency.
The design features of this MOSFET enable it to perform well in applications requiring high efficiency, high current and low power consumption, and can meet the performance requirements of a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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