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HUF75307T3ST-VB Product details
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HUF75307T3ST-VB Product Introduction
HUF75307T3ST-VB is a high-efficiency single N-channel power MOSFET packaged in SOT223. The device is designed to handle medium voltage switching applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and it can be turned on at a relatively low gate voltage. The on-resistance of HUF75307T3ST-VB is 85mΩ at VGS of 4.5V and 76mΩ at VGS of 10V, with excellent switching performance. The maximum drain current (ID) is 4.5A, suitable for low and medium power applications.
HUF75307T3ST-VB is a high-efficiency single N-channel power MOSFET packaged in SOT223. The device is designed to handle medium voltage switching applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and it can be turned on at a relatively low gate voltage. The on-resistance of HUF75307T3ST-VB is 85mΩ at VGS of 4.5V and 76mΩ at VGS of 10V, with excellent switching performance. The maximum drain current (ID) is 4.5A, suitable for low and medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
HUF75307T3ST-VB Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench
Domain and module applications：
HUF75307T3ST-VB Applications and Modules
HUF75307T3ST-VB MOSFET is widely used in **small and medium power switching power supplies** (SMPS), including DC-DC converters and AC-DC power modules, due to its low on-resistance and high current carrying capacity. This makes it play an important role in **power management** and **battery-powered systems**, especially in situations where high efficiency and low power consumption are required. In **motor drive** applications, such as stepper motors and DC motor controllers, its low RDS(ON) characteristics help improve drive efficiency and reduce power loss. In addition, HUF75307T3ST-VB is also suitable for **load switches** and **protection circuits**, and can provide reliable performance in switch control and overcurrent protection.
HUF75307T3ST-VB MOSFET is widely used in **small and medium power switching power supplies** (SMPS), including DC-DC converters and AC-DC power modules, due to its low on-resistance and high current carrying capacity. This makes it play an important role in **power management** and **battery-powered systems**, especially in situations where high efficiency and low power consumption are required. In **motor drive** applications, such as stepper motors and DC motor controllers, its low RDS(ON) characteristics help improve drive efficiency and reduce power loss. In addition, HUF75307T3ST-VB is also suitable for **load switches** and **protection circuits**, and can provide reliable performance in switch control and overcurrent protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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