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HUF75307S-VB Product details
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Product Introduction
**HUF75307S-VB** is a high-efficiency single N-channel MOSFET in a TO-252 package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a variety of high-voltage and high-power environments. Its turn-on voltage (Vth) is 1.7V, showing good switching performance. The on-resistance (RDS(ON)) of the MOSFET is 85mΩ at VGS=4.5V, and at VGS=10V, the on-resistance is reduced to 73mΩ, indicating that it has low conduction losses and high efficiency. The maximum continuous drain current (ID) is 18A. HUF75307S-VB uses Trench technology, providing excellent electrical performance and high reliability, and is very suitable for high-power and high-efficiency application scenarios.
**HUF75307S-VB** is a high-efficiency single N-channel MOSFET in a TO-252 package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a variety of high-voltage and high-power environments. Its turn-on voltage (Vth) is 1.7V, showing good switching performance. The on-resistance (RDS(ON)) of the MOSFET is 85mΩ at VGS=4.5V, and at VGS=10V, the on-resistance is reduced to 73mΩ, indicating that it has low conduction losses and high efficiency. The maximum continuous drain current (ID) is 18A. HUF75307S-VB uses Trench technology, providing excellent electrical performance and high reliability, and is very suitable for high-power and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Model**: HUF75307S-VB
2. **Package type**: TO-252
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 60V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 1.7V
7. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 18A
9. **Technology**: Trench
1. **Model**: HUF75307S-VB
2. **Package type**: TO-252
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 60V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 1.7V
7. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 18A
9. **Technology**: Trench
Domain and module applications：
Applications and modules
**HUF75307S-VB** is suitable for the following fields and modules due to its excellent conduction performance and high current capability:
1. **Power management system**: In switching power supplies and DC-DC converters, HUF75307S-VB can effectively reduce conduction losses and improve power conversion efficiency. It is very suitable for computer power supplies, TV power supplies, and other power systems that require high efficiency and stability.
2. **Motor drive module**: In motor control applications, this MOSFET can be used in power tools, electric vehicles, and various industrial automation equipment to provide stable current control and efficient switching performance to meet the needs of high current and low power loss.
3. **Power amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF75307S-VB can handle high currents, provide reliable performance and low heat generation, and is suitable for audio systems and wireless communication equipment.
4. **LED drive circuit**: The low on-resistance of this MOSFET makes it suitable for LED drive circuits, providing efficient energy conversion and reliable drive control, and is widely used in LED lighting systems and lighting control modules.
**HUF75307S-VB** demonstrates its excellent performance and efficient operation capabilities in these applications, and can meet the needs of various high-power and high-efficiency scenarios.
**HUF75307S-VB** is suitable for the following fields and modules due to its excellent conduction performance and high current capability:
1. **Power management system**: In switching power supplies and DC-DC converters, HUF75307S-VB can effectively reduce conduction losses and improve power conversion efficiency. It is very suitable for computer power supplies, TV power supplies, and other power systems that require high efficiency and stability.
2. **Motor drive module**: In motor control applications, this MOSFET can be used in power tools, electric vehicles, and various industrial automation equipment to provide stable current control and efficient switching performance to meet the needs of high current and low power loss.
3. **Power amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF75307S-VB can handle high currents, provide reliable performance and low heat generation, and is suitable for audio systems and wireless communication equipment.
4. **LED drive circuit**: The low on-resistance of this MOSFET makes it suitable for LED drive circuits, providing efficient energy conversion and reliable drive control, and is widely used in LED lighting systems and lighting control modules.
**HUF75307S-VB** demonstrates its excellent performance and efficient operation capabilities in these applications, and can meet the needs of various high-power and high-efficiency scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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