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HUF75307DS3S-VB Product details
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HUF75307DS3S-VB MOSFET Product Introduction
**HUF75307DS3S-VB** is a high-performance N-Channel MOSFET in TO252 package. It uses advanced Trench technology to provide excellent switching characteristics and stable on-resistance. The maximum drain-source voltage of this MOSFET is 60V, and it can withstand a continuous current of up to 18A, suitable for applications requiring higher current and low on-resistance. Its gate threshold voltage is 1.7V, which allows it to conduct at a lower gate drive voltage, further improving its performance in low-voltage applications.
**HUF75307DS3S-VB** is a high-performance N-Channel MOSFET in TO252 package. It uses advanced Trench technology to provide excellent switching characteristics and stable on-resistance. The maximum drain-source voltage of this MOSFET is 60V, and it can withstand a continuous current of up to 18A, suitable for applications requiring higher current and low on-resistance. Its gate threshold voltage is 1.7V, which allows it to conduct at a lower gate drive voltage, further improving its performance in low-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HUF75307DS3S-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Model**: HUF75307DS3S-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Switching Power Supply**: The low on-resistance and high current handling capability of the HUF75307DS3S-VB MOSFET make it ideal for switching power supply applications. It can effectively reduce power loss and improve the efficiency of the system, especially for power modules such as DC-DC converters and AC-DC adapters.
2. **Motor Drive**: This MOSFET performs well in motor drive systems, especially when used to control DC motors and stepper motors. Its low on-resistance and high current carrying capacity enable it to handle high current loads, improving the efficiency and reliability of motor drives.
3. **LED Driver**: In LED drive circuits, the HUF75307DS3S-VB can be used to provide stable current and voltage to ensure the normal operation of the LED. Its low on-resistance helps reduce power loss and increase the efficiency of the driver.
4. **Automotive electronics**: Due to its excellent switching characteristics and stability, this MOSFET is also suitable for automotive electronic systems such as battery management systems and motor control modules. Its high current carrying capacity ensures reliable performance in automotive applications.
5. **Battery management system**: In battery management and charging systems, the low on-resistance of HUF75307DS3S-VB can effectively improve system efficiency and reduce energy loss, especially in applications requiring efficient current switching.
These application scenarios demonstrate the wide applicability of HUF75307DS3S-VB MOSFET in various high-efficiency circuits.
1. **Switching Power Supply**: The low on-resistance and high current handling capability of the HUF75307DS3S-VB MOSFET make it ideal for switching power supply applications. It can effectively reduce power loss and improve the efficiency of the system, especially for power modules such as DC-DC converters and AC-DC adapters.
2. **Motor Drive**: This MOSFET performs well in motor drive systems, especially when used to control DC motors and stepper motors. Its low on-resistance and high current carrying capacity enable it to handle high current loads, improving the efficiency and reliability of motor drives.
3. **LED Driver**: In LED drive circuits, the HUF75307DS3S-VB can be used to provide stable current and voltage to ensure the normal operation of the LED. Its low on-resistance helps reduce power loss and increase the efficiency of the driver.
4. **Automotive electronics**: Due to its excellent switching characteristics and stability, this MOSFET is also suitable for automotive electronic systems such as battery management systems and motor control modules. Its high current carrying capacity ensures reliable performance in automotive applications.
5. **Battery management system**: In battery management and charging systems, the low on-resistance of HUF75307DS3S-VB can effectively improve system efficiency and reduce energy loss, especially in applications requiring efficient current switching.
These application scenarios demonstrate the wide applicability of HUF75307DS3S-VB MOSFET in various high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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