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HS50N06DA-VB Product details
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Product Introduction
**HS50N06DA-VB** is a high-efficiency N-Channel MOSFET in a TO252 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V, and the drain-source resistance (RDS(ON)) is 13mΩ at VGS = 4.5V and 10mΩ at VGS = 10V. The maximum continuous drain current (ID) is 58A. This MOSFET uses Trench technology to provide excellent switching performance and efficient conduction capability.
**HS50N06DA-VB** is a high-efficiency N-Channel MOSFET in a TO252 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V, and the drain-source resistance (RDS(ON)) is 13mΩ at VGS = 4.5V and 10mΩ at VGS = 10V. The maximum continuous drain current (ID) is 58A. This MOSFET uses Trench technology to provide excellent switching performance and efficient conduction capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **Drain-source resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **Drain-source resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. Power management system **
HS50N06DA-VB is used as a switching element in power management systems to effectively control high current loads. Its low RDS(ON) characteristics help reduce switching losses and improve the overall efficiency and reliability of the system.
**2. DC-DC converter **
In DC-DC converters, this MOSFET can withstand high currents and provide low on-resistance, suitable for high-efficiency power conversion applications. Its Trench technology ensures fast switching performance and low conduction losses.
**3. Motor drive **
HS50N06DA-VB is suitable for high-current switching elements in motor drives, especially in motor control applications that require high current and low switching losses. Its high current handling capability and low RDS(ON) can effectively improve the drive efficiency of the motor.
**4. Load Switch**
In various load switch applications, this MOSFET can provide stable switching control and is suitable for use as a switching element for load power supplies. It can maintain a low on-resistance under high current conditions to reduce power consumption.
**5. Switching Power Supply (SMPS)**
HS50N06DA-VB is used as the main switching element in the switching power supply to provide stable current transmission and efficient power conversion. Its low RDS(ON) and high current carrying capacity make it excellent in high-efficiency switching power supply applications.
The design features of this MOSFET make it particularly suitable for applications that require high current, high-efficiency switching, and high power density, and can effectively meet the performance requirements of various electronic devices.
**1. Power management system **
HS50N06DA-VB is used as a switching element in power management systems to effectively control high current loads. Its low RDS(ON) characteristics help reduce switching losses and improve the overall efficiency and reliability of the system.
**2. DC-DC converter **
In DC-DC converters, this MOSFET can withstand high currents and provide low on-resistance, suitable for high-efficiency power conversion applications. Its Trench technology ensures fast switching performance and low conduction losses.
**3. Motor drive **
HS50N06DA-VB is suitable for high-current switching elements in motor drives, especially in motor control applications that require high current and low switching losses. Its high current handling capability and low RDS(ON) can effectively improve the drive efficiency of the motor.
**4. Load Switch**
In various load switch applications, this MOSFET can provide stable switching control and is suitable for use as a switching element for load power supplies. It can maintain a low on-resistance under high current conditions to reduce power consumption.
**5. Switching Power Supply (SMPS)**
HS50N06DA-VB is used as the main switching element in the switching power supply to provide stable current transmission and efficient power conversion. Its low RDS(ON) and high current carrying capacity make it excellent in high-efficiency switching power supply applications.
The design features of this MOSFET make it particularly suitable for applications that require high current, high-efficiency switching, and high power density, and can effectively meet the performance requirements of various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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