Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
HRP75N75V-VB Detailed parameter description
1. **Package type**: TO220
This package provides good heat dissipation and high power handling capabilities, which is very suitable for applications that require strong power management.
2. **Configuration**: Single N-channel
The single N-channel configuration simplifies circuit design and provides efficient current transmission.
3. **Drain-source voltage (VDS)**: 80V
Suitable for medium to high voltage applications, ensuring that the device can work stably under higher voltage conditions.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range makes the device more flexible in various circuit designs while providing better protection functions.
5. **Threshold voltage (Vth)**: 3V
The relatively low threshold voltage ensures that the device can be turned on at a lower gate voltage, improving switching speed and efficiency.
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
Low on-resistance reduces power loss and improves overall system efficiency.
7. **Maximum drain current (ID)**: 100A
Supports currents up to 100A, making it suitable for high-power applications and high-load scenarios.
8. **Technology**: Trench
Trench technology provides low on-resistance and low switching losses, improving switching efficiency and reliability.
Domain and module applications：
Application fields and module examples
1. **Power converter**: The high current and low on-resistance characteristics of HRP75N75V-VB make it very suitable for use in power converters, such as DC-DC converters and AC-DC adapters, to improve power conversion efficiency and reduce energy loss.
2. **Motor drive**: In motor drive applications, this MOSFET can handle high current loads, ensure efficient drive and stable control of motors, and is widely used in industrial automation and power tools.
3. **Power amplifier**: In power amplifier circuits, the low on-resistance and high current capability of HRP75N75V-VB enable it to handle high-power signals, improving system performance and stability.
4. **LED drive circuit**: In LED drive circuits, this MOSFET can provide efficient current management, ensuring stable brightness and long life of LED lamps.
5. **Inverter**: In the inverter system, HRP75N75V-VB can handle high current and high voltage switching operations, improve the efficiency and reliability of the inverter, and is suitable for solar inverters and UPS systems.
Through the introduction of these application fields, it can be seen that HRP75N75V-VB MOSFET is widely used in various high-power and high-efficiency electronic systems due to its excellent electrical performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
