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HRD50N06K-VB Product details
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HRD50N06K-VB MOSFET Product Introduction
**HRD50N06K-VB** is a high-performance N-Channel MOSFET with a TO252 package type. It uses Trench technology to provide excellent switching performance and low on-resistance, suitable for a variety of high-current and high-efficiency applications. The maximum drain-source voltage of this MOSFET is 60V and it can withstand a continuous current of up to 58A, which makes it an excellent performer in circuits requiring high power handling.
**HRD50N06K-VB** is a high-performance N-Channel MOSFET with a TO252 package type. It uses Trench technology to provide excellent switching performance and low on-resistance, suitable for a variety of high-current and high-efficiency applications. The maximum drain-source voltage of this MOSFET is 60V and it can withstand a continuous current of up to 58A, which makes it an excellent performer in circuits requiring high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HRD50N06K-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
- **Model**: HRD50N06K-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management System**: The HRD50N06K-VB MOSFET is ideal for use in power conversion and management modules due to its low on-resistance and high current carrying capability. This includes DC-DC converters, AC-DC adapters, and power distribution systems, which can effectively reduce power losses and improve system efficiency.
2. **Electric Vehicle**: In electric vehicles, this MOSFET can be used for motor drive control and battery management systems. Its high current carrying capability and low on-resistance enable it to handle high power requirements and improve the overall performance and reliability of the system.
3. **Switching Power Supply**: Due to its excellent switching performance and low on-resistance, the HRD50N06K-VB is an ideal choice for switching power supply modules. This MOSFET is able to keep heat generation low in high-frequency switching applications, thereby improving overall efficiency and stability.
4. **Current protection and overcurrent protection circuits**: In protection circuits that require fast response and high current carrying capacity, this MOSFET can effectively perform overcurrent protection and short-circuit protection to ensure the safety and stability of the system.
5. **Industrial automation equipment**: HRD50N06K-VB is also suitable for motor drive and control systems in industrial automation equipment. Its high reliability and stability enable it to provide long-lasting performance in harsh industrial environments.
These application scenarios demonstrate the versatility of HRD50N06K-VB MOSFET and its applicability in a variety of high-performance circuits.
1. **Power Management System**: The HRD50N06K-VB MOSFET is ideal for use in power conversion and management modules due to its low on-resistance and high current carrying capability. This includes DC-DC converters, AC-DC adapters, and power distribution systems, which can effectively reduce power losses and improve system efficiency.
2. **Electric Vehicle**: In electric vehicles, this MOSFET can be used for motor drive control and battery management systems. Its high current carrying capability and low on-resistance enable it to handle high power requirements and improve the overall performance and reliability of the system.
3. **Switching Power Supply**: Due to its excellent switching performance and low on-resistance, the HRD50N06K-VB is an ideal choice for switching power supply modules. This MOSFET is able to keep heat generation low in high-frequency switching applications, thereby improving overall efficiency and stability.
4. **Current protection and overcurrent protection circuits**: In protection circuits that require fast response and high current carrying capacity, this MOSFET can effectively perform overcurrent protection and short-circuit protection to ensure the safety and stability of the system.
5. **Industrial automation equipment**: HRD50N06K-VB is also suitable for motor drive and control systems in industrial automation equipment. Its high reliability and stability enable it to provide long-lasting performance in harsh industrial environments.
These application scenarios demonstrate the versatility of HRD50N06K-VB MOSFET and its applicability in a variety of high-performance circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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