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HMS8N70K-VB Product details
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HMS8N70K-VB MOSFET Product Introduction
HMS8N70K-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high voltage and efficient power conversion. The device has a drain-source voltage (VDS) of 700V and a maximum drain current (ID) of 10A. Combined with SJ_Multi-EPI technology, it has excellent switching characteristics and low conduction losses under high voltage. Its 600mΩ on-resistance (RDS(ON)) can ensure efficient current transmission at VGS=10V, suitable for use in harsh power management and conversion environments.
HMS8N70K-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high voltage and efficient power conversion. The device has a drain-source voltage (VDS) of 700V and a maximum drain current (ID) of 10A. Combined with SJ_Multi-EPI technology, it has excellent switching characteristics and low conduction losses under high voltage. Its 600mΩ on-resistance (RDS(ON)) can ensure efficient current transmission at VGS=10V, suitable for use in harsh power management and conversion environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HMS8N70K-VB Detailed parameter description
1. **Package type**: TO252
The package provides good heat dissipation and compact size, suitable for space-constrained applications.
2. **Configuration**: Single N-channel
The single N-channel configuration ensures simple circuit design and high efficiency in high-voltage applications.
3. **Drain-source voltage (VDS)**: 700V
Suitable for high-voltage applications such as power conversion and industrial control.
4. **Gate-source voltage (VGS)**: ±30V
The wide gate voltage range enhances the operating flexibility and protection function of the device.
5. **Threshold voltage (Vth)**: 3.5V
The relatively high threshold voltage makes it consume less power in standby state.
6. **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
Low on-resistance ensures efficient current transfer and reduces power loss.
7. **Maximum drain current (ID)**: 10A
Supports currents up to 10A, making it suitable for applications with medium power requirements.
8. **Technology**: SJ_Multi-EPI
This technology provides low switching losses and high reliability, suitable for high-frequency switching applications.
1. **Package type**: TO252
The package provides good heat dissipation and compact size, suitable for space-constrained applications.
2. **Configuration**: Single N-channel
The single N-channel configuration ensures simple circuit design and high efficiency in high-voltage applications.
3. **Drain-source voltage (VDS)**: 700V
Suitable for high-voltage applications such as power conversion and industrial control.
4. **Gate-source voltage (VGS)**: ±30V
The wide gate voltage range enhances the operating flexibility and protection function of the device.
5. **Threshold voltage (Vth)**: 3.5V
The relatively high threshold voltage makes it consume less power in standby state.
6. **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
Low on-resistance ensures efficient current transfer and reduces power loss.
7. **Maximum drain current (ID)**: 10A
Supports currents up to 10A, making it suitable for applications with medium power requirements.
8. **Technology**: SJ_Multi-EPI
This technology provides low switching losses and high reliability, suitable for high-frequency switching applications.
Domain and module applications：
Application fields and module examples
1. **Power management**: HMS8N70K-VB is suitable for various power management modules, especially in high-voltage power systems. It can be used in AC-DC converters and DC-DC converters to provide efficient power conversion.
2. **Industrial control**: Due to its high voltage and high current characteristics, this MOSFET is widely used in industrial automation and control systems, suitable for driving large motors and controlling power switches.
3. **Lighting equipment**: In LED lighting and HID lighting circuits, the high withstand voltage characteristics of HMS8N70K-VB enable it to withstand the high voltage shock when lighting is started, ensuring the stability and long life of the equipment.
4. **Inverter and UPS system**: In uninterruptible power supply (UPS) and inverter, this MOSFET can effectively handle high voltage conversion and switching, ensuring stable power output.
From the introduction of these application areas, it can be seen that the HMS8N70K-VB MOSFET is a versatile device that can provide reliable performance and efficient power conversion in a variety of high-voltage and high-power demand scenarios.
1. **Power management**: HMS8N70K-VB is suitable for various power management modules, especially in high-voltage power systems. It can be used in AC-DC converters and DC-DC converters to provide efficient power conversion.
2. **Industrial control**: Due to its high voltage and high current characteristics, this MOSFET is widely used in industrial automation and control systems, suitable for driving large motors and controlling power switches.
3. **Lighting equipment**: In LED lighting and HID lighting circuits, the high withstand voltage characteristics of HMS8N70K-VB enable it to withstand the high voltage shock when lighting is started, ensuring the stability and long life of the equipment.
4. **Inverter and UPS system**: In uninterruptible power supply (UPS) and inverter, this MOSFET can effectively handle high voltage conversion and switching, ensuring stable power output.
From the introduction of these application areas, it can be seen that the HMS8N70K-VB MOSFET is a versatile device that can provide reliable performance and efficient power conversion in a variety of high-voltage and high-power demand scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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