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HMS8N70I-VB Product details
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1. Product Introduction
HMS8N70I-VB is a single N-channel power MOSFET in TO251 package. It has high voltage withstand capability, with a rated drain-source voltage (VDS) of 700V, and can withstand a gate-source voltage (VGS) of ±30V. This MOSFET adopts advanced super junction multi-epitaxial (SJ_Multi-EPI) technology, which significantly reduces the on-resistance and switching losses, making it perform well in high-voltage applications. With an on-resistance of 600mΩ at VGS of 10V and a maximum drain current (ID) of 10A, the device is suitable for power electronic systems with high performance and high reliability requirements.
HMS8N70I-VB is a single N-channel power MOSFET in TO251 package. It has high voltage withstand capability, with a rated drain-source voltage (VDS) of 700V, and can withstand a gate-source voltage (VGS) of ±30V. This MOSFET adopts advanced super junction multi-epitaxial (SJ_Multi-EPI) technology, which significantly reduces the on-resistance and switching losses, making it perform well in high-voltage applications. With an on-resistance of 600mΩ at VGS of 10V and a maximum drain current (ID) of 10A, the device is suitable for power electronic systems with high performance and high reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ@VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ@VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and modules
HMS8N70I-VB MOSFET is mainly suitable for high-voltage power electronics, especially in the following application modules:
1. **Power converter**: This device is suitable for high-voltage DC to DC converters and AC to DC power converters. In these applications, high withstand voltage characteristics and low on-resistance can improve conversion efficiency and reduce energy consumption.
2. **Motor drive**: In industrial motor control systems, HMS8N70I-VB can be used to drive high-voltage motors. Its high voltage and current capabilities ensure stable operation and efficient control of the system.
3. **Power adapter and charger**: This MOSFET can withstand higher voltages and is suitable for the design of power adapters and chargers with high-voltage inputs, especially in situations where lightweight and high efficiency are required.
4. **Uninterruptible Power Supply (UPS) System**: Due to its reliable high voltage characteristics and excellent switching performance, HMS8N70I-VB is suitable for uninterruptible power supply systems, ensuring that when power is interrupted, the equipment can quickly switch to the backup power supply to provide continuous power supply.
This wide range of applications makes HMS8N70I-VB a valuable component in the design of modern high-voltage power electronic systems.
HMS8N70I-VB MOSFET is mainly suitable for high-voltage power electronics, especially in the following application modules:
1. **Power converter**: This device is suitable for high-voltage DC to DC converters and AC to DC power converters. In these applications, high withstand voltage characteristics and low on-resistance can improve conversion efficiency and reduce energy consumption.
2. **Motor drive**: In industrial motor control systems, HMS8N70I-VB can be used to drive high-voltage motors. Its high voltage and current capabilities ensure stable operation and efficient control of the system.
3. **Power adapter and charger**: This MOSFET can withstand higher voltages and is suitable for the design of power adapters and chargers with high-voltage inputs, especially in situations where lightweight and high efficiency are required.
4. **Uninterruptible Power Supply (UPS) System**: Due to its reliable high voltage characteristics and excellent switching performance, HMS8N70I-VB is suitable for uninterruptible power supply systems, ensuring that when power is interrupted, the equipment can quickly switch to the backup power supply to provide continuous power supply.
This wide range of applications makes HMS8N70I-VB a valuable component in the design of modern high-voltage power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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