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HMS8N70F-VB Product details
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HMS8N70F-VB Product Introduction
HMS8N70F-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high-voltage switching applications. The device has a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, and can provide stable switching performance in harsh electrical environments. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 390mΩ@VGS=10V, and the maximum continuous drain current (ID) is 10A. The device is based on Super Junction (SJ_Multi-EPI) technology, with low on-resistance and excellent switching performance, and is ideal for efficient power management and switching conversion applications.
HMS8N70F-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high-voltage switching applications. The device has a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, and can provide stable switching performance in harsh electrical environments. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 390mΩ@VGS=10V, and the maximum continuous drain current (ID) is 10A. The device is based on Super Junction (SJ_Multi-EPI) technology, with low on-resistance and excellent switching performance, and is ideal for efficient power management and switching conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HMS8N70F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ@VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ@VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
HMS8N70F-VB Applications and Modules
HMS8N70F-VB MOSFET is widely used in many fields due to its high voltage, high reliability and low on-resistance. In **switching power supplies (SMPS)**, it is used in power factor correction (PFC) circuits and main switch parts to improve conversion efficiency and reduce energy loss. In **motor drives**, this MOSFET can be used as a switching element for inverters or DC-DC converters to ensure efficient operation of the system. In addition, in renewable energy applications such as **photovoltaic inverters**, HMS8N70F-VB is a key power control element that can withstand high voltages and ensure stable power transmission. In **industrial electrical equipment**, such as uninterruptible power supplies (UPS) and industrial power modules, this device can also play an important role in providing reliable power switching functions.
HMS8N70F-VB MOSFET is widely used in many fields due to its high voltage, high reliability and low on-resistance. In **switching power supplies (SMPS)**, it is used in power factor correction (PFC) circuits and main switch parts to improve conversion efficiency and reduce energy loss. In **motor drives**, this MOSFET can be used as a switching element for inverters or DC-DC converters to ensure efficient operation of the system. In addition, in renewable energy applications such as **photovoltaic inverters**, HMS8N70F-VB is a key power control element that can withstand high voltages and ensure stable power transmission. In **industrial electrical equipment**, such as uninterruptible power supplies (UPS) and industrial power modules, this device can also play an important role in providing reliable power switching functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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