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HMS8N65K-VB Product details
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1. HMS8N65K-VB MOSFET Product Introduction
HMS8N65K-VB is a single N-channel power MOSFET in a TO-252 package designed for high-voltage, high-efficiency applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring reliable operation under harsh conditions. Based on SJ_Multi-EPI technology, the HMS8N65K-VB provides low on-resistance and excellent switching performance, enabling it to excel in high-voltage and high-power applications. With a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ@VGS=10V, and a maximum drain current (ID) of 9A, it is ideal for a variety of industrial and commercial applications.
HMS8N65K-VB is a single N-channel power MOSFET in a TO-252 package designed for high-voltage, high-efficiency applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring reliable operation under harsh conditions. Based on SJ_Multi-EPI technology, the HMS8N65K-VB provides low on-resistance and excellent switching performance, enabling it to excel in high-voltage and high-power applications. With a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ@VGS=10V, and a maximum drain current (ID) of 9A, it is ideal for a variety of industrial and commercial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HMS8N65K-VB MOSFET Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Thermal resistance (RθJC)**: Typical value 0.75°C/W
- **Total gate charge (Qg)**: Typical value 42nC
- **Output capacitance (Coss)**: Typical value 80pF
- **Drain-source breakdown voltage (V(BR)DSS)**: 650V
- **Maximum power dissipation (Ptot)**: 50W typical (at Tc = 25°C)
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Thermal resistance (RθJC)**: Typical value 0.75°C/W
- **Total gate charge (Qg)**: Typical value 42nC
- **Output capacitance (Coss)**: Typical value 80pF
- **Drain-source breakdown voltage (V(BR)DSS)**: 650V
- **Maximum power dissipation (Ptot)**: 50W typical (at Tc = 25°C)
Domain and module applications：
3. HMS8N65K-VB MOSFET Application Fields and Module Examples
1. **High Voltage Power Converter**: HMS8N65K-VB performs well in switch mode power supplies (SMPS) and power converters, especially for applications that require high voltage operation. Its 650V withstand voltage capability and low on-resistance ensure efficient energy conversion, reduce system power consumption, and improve the overall efficiency of the power supply.
2. **Solar Photovoltaic Inverter**: This MOSFET is suitable for inverter modules in solar photovoltaic systems, which can efficiently convert DC power to AC power. Its high voltage capability and low loss characteristics make it an ideal choice for achieving efficient energy conversion, thereby improving the performance of the entire solar system.
3. **Industrial Motor Drive**: HMS8N65K-VB is suitable for use in industrial motor drives and control systems, especially in applications that need to handle high voltages and high currents. Its stable operating performance and high withstand voltage capability can cope with various challenges in industrial environments and ensure the stable operation of motors.
4. **LED drive circuit**: In LED lighting drive circuits that require high voltage operation, this MOSFET can effectively manage high voltage and switching current, ensuring the long life and stability of the LED system, thereby improving the overall efficiency of lighting equipment.
HMS8N65K-VB is a versatile power MOSFET suitable for a variety of applications requiring efficient energy conversion and high voltage operation, including but not limited to power converters, photovoltaic inverters, industrial control and LED lighting.
1. **High Voltage Power Converter**: HMS8N65K-VB performs well in switch mode power supplies (SMPS) and power converters, especially for applications that require high voltage operation. Its 650V withstand voltage capability and low on-resistance ensure efficient energy conversion, reduce system power consumption, and improve the overall efficiency of the power supply.
2. **Solar Photovoltaic Inverter**: This MOSFET is suitable for inverter modules in solar photovoltaic systems, which can efficiently convert DC power to AC power. Its high voltage capability and low loss characteristics make it an ideal choice for achieving efficient energy conversion, thereby improving the performance of the entire solar system.
3. **Industrial Motor Drive**: HMS8N65K-VB is suitable for use in industrial motor drives and control systems, especially in applications that need to handle high voltages and high currents. Its stable operating performance and high withstand voltage capability can cope with various challenges in industrial environments and ensure the stable operation of motors.
4. **LED drive circuit**: In LED lighting drive circuits that require high voltage operation, this MOSFET can effectively manage high voltage and switching current, ensuring the long life and stability of the LED system, thereby improving the overall efficiency of lighting equipment.
HMS8N65K-VB is a versatile power MOSFET suitable for a variety of applications requiring efficient energy conversion and high voltage operation, including but not limited to power converters, photovoltaic inverters, industrial control and LED lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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