HMS8N65I-VB Product details
Product introduction:
**HMS8N65I-VB** is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage and high power applications. It has a maximum drain-source voltage (VDS) of 650V, suitable for use in high voltage environments. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, meeting various driving requirements. The HMS8N65I-VB with SJ_Multi-EPI technology has high voltage tolerance and relatively low drain-source resistance (RDS(ON)), making it excellent in high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: HMS8N65I-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 500mΩ (VGS=10V)
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power converter**: HMS8N65I-VB is suitable for high-voltage power converters such as switch mode power supplies (SMPS) and high-power uninterruptible power supplies (UPS). Its high withstand voltage of 650V enables it to work stably in high-voltage environments, while its low RDS(ON) helps reduce power loss and improve system efficiency.
2. **Motor drive**: In high-voltage motor drive applications such as industrial motor control systems and high-voltage servo motor systems, the high current capability and stability of HMS8N65I-VB enable it to effectively control the motor and provide reliable drive performance.
3. **Power switch**: This MOSFET is suitable for high-voltage power switching applications such as high-frequency power switching circuits and power switches. Its high withstand voltage and low RDS(ON) characteristics ensure low power loss and efficient switching performance during the switching process.
4. **Lighting control system**: In high-voltage lighting control systems, such as the drive circuits of high-power metal halide lamps and high-pressure sodium lamps, the HMS8N65I-VB is able to provide stable switching performance to ensure reliable operation of the lighting system.
5. **High-voltage motor control**: Due to its high voltage and high current capabilities, this MOSFET is also suitable for high-voltage motor control and speed regulation systems. Its high voltage withstand capability ensures safety and stability under high-voltage working conditions.
Overall, the high voltage tolerance, low drain-source resistance, and good switching performance of the HMS8N65I-VB enable it to perform well in high-power applications such as high-voltage power supplies, motor drives, power switches, and lighting controls.
Technical support:
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