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HMS8N60K-VB Product details
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1. HMS8N60K-VB MOSFET Product Introduction
HMS8N60K-VB is a high-performance single N-channel power MOSFET in TO-252 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Based on SJ_Multi-EPI technology, the device has excellent switching performance and low on-resistance, making it suitable for use in high-voltage applications. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 500mΩ@VGS=10V, and maximum drain current (ID) is 9A, which is very suitable for various high-power conversion scenarios that require high efficiency and reliability.
HMS8N60K-VB is a high-performance single N-channel power MOSFET in TO-252 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Based on SJ_Multi-EPI technology, the device has excellent switching performance and low on-resistance, making it suitable for use in high-voltage applications. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 500mΩ@VGS=10V, and maximum drain current (ID) is 9A, which is very suitable for various high-power conversion scenarios that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HMS8N60K-VB MOSFET Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Drain-source breakdown voltage (V(BR)DSS)**: Typical value 650V
- **Thermal resistance (RθJC)**: Typical value 0.75°C/W
- **Gate charge (Qg)**: Typical value 42nC
- **Output capacitance (Coss)**: Typical value 80pF
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Drain-source breakdown voltage (V(BR)DSS)**: Typical value 650V
- **Thermal resistance (RθJC)**: Typical value 0.75°C/W
- **Gate charge (Qg)**: Typical value 42nC
- **Output capacitance (Coss)**: Typical value 80pF
Domain and module applications：
3. HMS8N60K-VB MOSFET Application Fields and Module Examples
1. **Power Module**: HMS8N60K-VB is very suitable for high-voltage power modules, such as power switches in switch mode power supplies (SMPS) and power converters. Its high withstand voltage capability of 650V and low on-resistance enable it to reduce losses in efficient energy conversion, thereby improving the overall efficiency of the system.
2. **Photovoltaic Inverter**: In photovoltaic systems, this MOSFET can be used in inverter circuits to provide stable high-voltage switching operations, thereby effectively converting DC power to AC power. Its high withstand voltage capability and excellent conduction characteristics ensure reliability and efficiency under high-power operation.
3. **Industrial Control**: HMS8N60K-VB is also suitable for industrial motor drive and control systems, especially in situations where high voltage and high current need to be handled. Its stable turn-on characteristics and high withstand voltage capability enable it to operate stably for a long time in complex industrial environments.
4. **Lighting equipment**: In LED drive circuits and other high-voltage lighting applications, this MOSFET can effectively manage high-voltage input and switching currents, ensuring long life and high reliability of lighting equipment.
Overall, the HMS8N60K-VB MOSFET is a versatile, high-performance power device that is very suitable for a variety of fields that require efficient energy conversion and high-voltage operation.
1. **Power Module**: HMS8N60K-VB is very suitable for high-voltage power modules, such as power switches in switch mode power supplies (SMPS) and power converters. Its high withstand voltage capability of 650V and low on-resistance enable it to reduce losses in efficient energy conversion, thereby improving the overall efficiency of the system.
2. **Photovoltaic Inverter**: In photovoltaic systems, this MOSFET can be used in inverter circuits to provide stable high-voltage switching operations, thereby effectively converting DC power to AC power. Its high withstand voltage capability and excellent conduction characteristics ensure reliability and efficiency under high-power operation.
3. **Industrial Control**: HMS8N60K-VB is also suitable for industrial motor drive and control systems, especially in situations where high voltage and high current need to be handled. Its stable turn-on characteristics and high withstand voltage capability enable it to operate stably for a long time in complex industrial environments.
4. **Lighting equipment**: In LED drive circuits and other high-voltage lighting applications, this MOSFET can effectively manage high-voltage input and switching currents, ensuring long life and high reliability of lighting equipment.
Overall, the HMS8N60K-VB MOSFET is a versatile, high-performance power device that is very suitable for a variety of fields that require efficient energy conversion and high-voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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