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HMS8N60I-VB Product details

Product introduction:

HMS8N60I-VB MOSFET Product Introduction

HMS8N60I-VB is a high-voltage unipolar N-channel MOSFET in TO251 package, designed for applications requiring high voltage and high power. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and can handle a maximum continuous drain current (ID) of up to 9A. The MOSFET has an on-resistance of 500mΩ (at VGS=10V) and uses advanced super junction and multi-epitaxial (Multi-EPI) technology, which enables it to provide excellent performance and reliability in high-voltage applications. HMS8N60I-VB is suitable for fields such as high-voltage power switching and power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
HMS8N60I-VB MOSFET Detailed parameter description

- **Package form**: TO251
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: Super junction (SJ_Multi-EPI)

Domain and module applications:

Application fields and modules of HMS8N60I-VB

1. **High-voltage power switch**: HMS8N60I-VB is suitable for high-voltage power switching circuits such as AC-DC converters and high-voltage DC-DC converters. Its high voltage tolerance and stable switching performance make it an ideal choice for power management solutions that handle high voltage and high power, providing efficient power conversion and control.

2. **Inverter**: In inverter applications, such as solar inverters or uninterruptible power supply (UPS) systems, HMS8N60I-VB is able to handle high voltage and high power switching requirements. Its high voltage tolerance and low on-resistance ensure high efficiency and stability of the inverter, suitable for occasions requiring reliable power conversion.

3. **Motor drive**: This MOSFET is also suitable for motor drive applications such as power tools and industrial motor control. Its high voltage and high power handling capabilities enable it to provide stable current control and efficient switching functions, ensuring the performance and reliability of the motor system.

4. **High-power switching power supply**: In high-power switching power supplies, HMS8N60I-VB can be used as a key switching component to handle high voltage and high current switching requirements. Its excellent switching performance and high voltage tolerance make it a core component of high-efficiency power supply systems, suitable for various high-power applications such as industrial power supplies and power adapters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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