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HMS8N60F-VB Product details
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1. HMS8N60F-VB MOSFET Product Introduction
HMS8N60F-VB is a high-voltage single N-channel MOSFET in a TO220F package. This MOSFET provides a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high-voltage switching and control applications. Its threshold voltage (Vth) is 3.5V, enabling it to stably conduct at medium gate-source voltages. This MOSFET uses Plannar technology, which helps provide stable performance in high-voltage applications. Although the on-resistance (RDS(ON)) of 320mΩ @ VGS=10V is relatively high, its high withstand voltage and relatively high drain current (ID) enable it to perform well in high-voltage environments.
HMS8N60F-VB is a high-voltage single N-channel MOSFET in a TO220F package. This MOSFET provides a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high-voltage switching and control applications. Its threshold voltage (Vth) is 3.5V, enabling it to stably conduct at medium gate-source voltages. This MOSFET uses Plannar technology, which helps provide stable performance in high-voltage applications. Although the on-resistance (RDS(ON)) of 320mΩ @ VGS=10V is relatively high, its high withstand voltage and relatively high drain current (ID) enable it to perform well in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HMS8N60F-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Plannar technology
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Plannar technology
Domain and module applications：
3. HMS8N60F-VB MOSFET Application Fields and Modules
The high voltage capability and stability of HMS8N60F-VB make it very suitable in multiple fields and modules:
1. **High-voltage power switch**: Due to its high drain-source voltage of 650V, this MOSFET is suitable for high-voltage power modules such as switch mode power supplies (SMPS) and inverters. It can effectively control the switching of high-voltage power supplies to ensure the stability and safety of the power supply system.
2. **Power conversion system**: HMS8N60F-VB can be used in various power conversion systems, including high-voltage inverters and power converters. Its high voltage tolerance enables it to provide stable switching performance during high-voltage power conversion.
3. **Lighting control**: In high-voltage lighting control systems, such as xenon lamps and fluorescent lamp drivers, HMS8N60F-VB is able to handle high voltages to ensure the normal operation and stability of the lighting system.
4. **Motor drive**: Despite its relatively high on-resistance, the HMS8N60F-VB is still suitable for high-voltage motor drive systems to provide reliable switching control for motors, especially in application scenarios that require high voltage support.
The high voltage capability and stable performance of the HMS8N60F-VB make it an excellent choice for high voltage switching and power management systems.
The high voltage capability and stability of HMS8N60F-VB make it very suitable in multiple fields and modules:
1. **High-voltage power switch**: Due to its high drain-source voltage of 650V, this MOSFET is suitable for high-voltage power modules such as switch mode power supplies (SMPS) and inverters. It can effectively control the switching of high-voltage power supplies to ensure the stability and safety of the power supply system.
2. **Power conversion system**: HMS8N60F-VB can be used in various power conversion systems, including high-voltage inverters and power converters. Its high voltage tolerance enables it to provide stable switching performance during high-voltage power conversion.
3. **Lighting control**: In high-voltage lighting control systems, such as xenon lamps and fluorescent lamp drivers, HMS8N60F-VB is able to handle high voltages to ensure the normal operation and stability of the lighting system.
4. **Motor drive**: Despite its relatively high on-resistance, the HMS8N60F-VB is still suitable for high-voltage motor drive systems to provide reliable switching control for motors, especially in application scenarios that require high voltage support.
The high voltage capability and stable performance of the HMS8N60F-VB make it an excellent choice for high voltage switching and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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