Product introduction：
HMS80N10-VB MOSFET Product Introduction
The HMS80N10-VB is a high-performance N-channel MOSFET in a TO220 package, designed for high current and low on-resistance applications. The drain-source voltage (VDS) of this MOSFET is 100V, which is suitable for handling medium voltage environments. Its gate-source voltage (VGS) is ±20V, which can provide stable gate drive capabilities. The gate threshold voltage (Vth) of the MOSFET is 2.5V, which ensures efficient conduction even at relatively low gate voltages. The device uses Trench technology, and its on-resistance (RDS(ON)) is only 9mΩ at VGS = 10V and 20mΩ at VGS = 4.5V, with excellent current control capabilities. This MOSFET can handle drain currents up to 100A and is suitable for high current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
HMS80N10-VB MOSFET Detailed parameter description
1. **Package type**: TO220
2. **Channel configuration**: Single N channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
7. **Drain current (ID)**: 100A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to 150°C
10. **Maximum power dissipation (Ptot)**: Determined by heat dissipation conditions, generally 80W
Domain and module applications：
HMS80N10-VB MOSFET Application Areas and Module Examples
The high current handling capability and low on-resistance of the HMS80N10-VB MOSFET make it an excellent performer in several high current and power-intensive applications. Here are some application areas and module examples:
1. **High Current Switching**: Due to its ability to handle currents up to 100A and low on-resistance, the HMS80N10-VB is suitable for high current switching applications, such as in high-power DC-DC converters. It can effectively control large currents and reduce power consumption, improving the efficiency of the system.
2. **Motor Drive**: In motor control systems such as power tools, electric vehicles, and industrial motors, the high current handling capability and low on-resistance of the HMS80N10-VB make it an ideal switching element. It is able to provide a stable current supply and reduce switching losses.
3. **Power amplifier**: In power amplifier design, such as for audio amplifiers or wireless communication amplifiers, HMS80N10-VB can be used as a switch or load switch to ensure efficient power transmission and control.
4. **Power management**: In power management systems, such as high-power power converters and battery management systems, HMS80N10-VB can provide efficient current control, especially in situations where high current needs to be handled, such as battery protection and charging management.
In summary, the excellent current handling capability and low on-resistance of HMS80N10-VB show a wide range of application potential in the fields of high current switching, motor drive, power amplifier and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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