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HMS80N10D-VB Product details
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1. HMS80N10D-VB Product Introduction
HMS80N10D-VB is a high current single N-channel MOSFET in TO263 package. It is designed for high current and medium voltage applications and can withstand drain-source voltage (VDS) up to 100V. This MOSFET adopts Trench technology, which provides excellent conduction performance and low on-resistance. At VGS=10V, its on-resistance (RDS(ON)) is 10mΩ, and at VGS=4.5V it is 23mΩ, ensuring high efficiency under high load conditions. Its maximum drain current (ID) is up to 100A, suitable for use in high current applications.
HMS80N10D-VB is a high current single N-channel MOSFET in TO263 package. It is designed for high current and medium voltage applications and can withstand drain-source voltage (VDS) up to 100V. This MOSFET adopts Trench technology, which provides excellent conduction performance and low on-resistance. At VGS=10V, its on-resistance (RDS(ON)) is 10mΩ, and at VGS=4.5V it is 23mΩ, ensuring high efficiency under high load conditions. Its maximum drain current (ID) is up to 100A, suitable for use in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HMS80N10D-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package form**: TO263, suitable for high power and high current applications.
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package form**: TO263, suitable for high power and high current applications.
Domain and module applications：
3. Application fields and module examples
The high current handling capability and low on-resistance of the HMS80N10D-VB MOSFET make it suitable for a variety of high current and high power applications. In power management systems, this MOSFET can be used as a switching element for DC-DC converters to help improve system efficiency and reduce power consumption. In motor drivers, it is able to handle high current loads to ensure smooth operation of the motor. In industrial automation control systems, the HMS80N10D-VB is often used as a core component of high current switches and protection circuits to improve system reliability. In addition, in power protection modules, the low on-resistance and high current capability of this MOSFET make it suitable for overcurrent protection to prevent circuit damage. In high-power lighting systems, the HMS80N10D-VB can be used in electronic ballasts to ensure stable power control and efficient energy transmission.
The high current handling capability and low on-resistance of the HMS80N10D-VB MOSFET make it suitable for a variety of high current and high power applications. In power management systems, this MOSFET can be used as a switching element for DC-DC converters to help improve system efficiency and reduce power consumption. In motor drivers, it is able to handle high current loads to ensure smooth operation of the motor. In industrial automation control systems, the HMS80N10D-VB is often used as a core component of high current switches and protection circuits to improve system reliability. In addition, in power protection modules, the low on-resistance and high current capability of this MOSFET make it suitable for overcurrent protection to prevent circuit damage. In high-power lighting systems, the HMS80N10D-VB can be used in electronic ballasts to ensure stable power control and efficient energy transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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