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HMS80N10AL-VB Product details
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Product Introduction
**HMS80N10AL-VB** is a high-performance N-Channel MOSFET in a TO251 package, designed for medium and high power applications. It has a maximum drain-source voltage (VDS) of 100V, suitable for switch control in medium and high voltage environments. The maximum gate-source voltage (VGS) of the MOSFET is ±20V, meeting a wide range of drive requirements. This model uses Trench technology to achieve low drain-source resistance (RDS(ON)) and high switching speed, thereby improving performance in high-performance applications.
**HMS80N10AL-VB** is a high-performance N-Channel MOSFET in a TO251 package, designed for medium and high power applications. It has a maximum drain-source voltage (VDS) of 100V, suitable for switch control in medium and high voltage environments. The maximum gate-source voltage (VGS) of the MOSFET is ±20V, meeting a wide range of drive requirements. This model uses Trench technology to achieve low drain-source resistance (RDS(ON)) and high switching speed, thereby improving performance in high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: HMS80N10AL-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **Drain-source resistance (RDS(ON))**: 12.5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench
- **Model**: HMS80N10AL-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **Drain-source resistance (RDS(ON))**: 12.5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High-efficiency power converters**: The HMS80N10AL-VB is suitable for high-efficiency power converters such as DC-DC converters and high-power switching power supplies. Its low RDS(ON) characteristics can significantly reduce power losses and improve overall efficiency.
2. **Motor drive systems**: In medium and high power motor drive applications, such as power tools and industrial motor control systems, the high current capability and low RDS(ON) of the HMS80N10AL-VB can provide stable motor drive and optimize power output.
3. **Switching power supply**: This MOSFET can be used in a variety of switching power supply modules, especially in application scenarios requiring high efficiency and low power consumption. Its high current carrying capacity and low power consumption make it excel in high-power switching power supplies.
4. **Load switch**: The HMS80N10AL-VB also performs well in load switch applications, especially in battery management systems and power management modules. Its low RDS(ON) helps reduce power loss, extend battery life and improve system efficiency.
5. **Communication equipment**: In the high-frequency switching circuits in communication equipment, the Trench technology of HMS80N10AL-VB can provide high switching speed and low power consumption performance, ensuring efficient operation of the equipment.
Overall, the high current capability, low drain-source resistance and excellent switching performance of HMS80N10AL-VB make it very suitable for medium and high power applications, which can effectively improve the efficiency and reliability of the system.
1. **High-efficiency power converters**: The HMS80N10AL-VB is suitable for high-efficiency power converters such as DC-DC converters and high-power switching power supplies. Its low RDS(ON) characteristics can significantly reduce power losses and improve overall efficiency.
2. **Motor drive systems**: In medium and high power motor drive applications, such as power tools and industrial motor control systems, the high current capability and low RDS(ON) of the HMS80N10AL-VB can provide stable motor drive and optimize power output.
3. **Switching power supply**: This MOSFET can be used in a variety of switching power supply modules, especially in application scenarios requiring high efficiency and low power consumption. Its high current carrying capacity and low power consumption make it excel in high-power switching power supplies.
4. **Load switch**: The HMS80N10AL-VB also performs well in load switch applications, especially in battery management systems and power management modules. Its low RDS(ON) helps reduce power loss, extend battery life and improve system efficiency.
5. **Communication equipment**: In the high-frequency switching circuits in communication equipment, the Trench technology of HMS80N10AL-VB can provide high switching speed and low power consumption performance, ensuring efficient operation of the equipment.
Overall, the high current capability, low drain-source resistance and excellent switching performance of HMS80N10AL-VB make it very suitable for medium and high power applications, which can effectively improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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