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HMS60N10D-VB Product details

Product introduction:

HMS60N10D-VB MOSFET Product Introduction

HMS60N10D-VB is a high-performance N-channel MOSFET in DFN8 (5x6) package. It has a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 65A, which is very suitable for high power applications. The MOSFET adopts Trench technology, providing extremely low on-resistance and excellent switching performance, suitable for use in various power management and power conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 2.5V 65A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Package type**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12.36mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology type**: Trench

Domain and module applications:

Applications and module examples

1. **DC-DC converter**: HMS60N10D-VB is suitable for high-efficiency DC-DC converters. Its 100V withstand voltage and low on-resistance (9mΩ @ VGS=10V) enable it to excel in high-frequency switching operations, reduce power consumption and improve conversion efficiency, making it very suitable for power conversion modules.

2. **Power management system**: HMS60N10D-VB can be used as a key switching element in various power management applications. Its high current capability (65A) and low on-resistance enable it to effectively manage high-power loads and ensure stable and efficient operation of the system.

3. **Motor driver**: This MOSFET is also suitable for high-current switching applications in motor drive systems. Its high drain current capability and low RDS(ON) can handle high current loads in motor drives, improving the accuracy of motor control and the overall efficiency of the system.

4. **Power Inverter**: In photovoltaic inverters and uninterruptible power supply (UPS) systems, HMS60N10D-VB can be used as a switching element in high-efficiency inverter modules. Its high voltage tolerance and excellent conduction performance ensure stable and efficient operation of the inverter during high power conversion.

HMS60N10D-VB provides excellent performance and high power handling capabilities, suitable for a variety of high-efficiency power management and conversion systems, and is an ideal choice for applications requiring high efficiency, high power and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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