HMS4N70K-VB Product details
Product introduction:
The HMS4N70K-VB is a high voltage N-channel MOSFET in a TO252 package designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of up to 700V, making it suitable for high voltage environments. It supports a gate-source voltage (VGS) of ±30V and has a high gate threshold voltage (Vth) of 3.5V, ensuring efficient turn-on at the appropriate gate voltage. The MOSFET uses SJ_Multi-EPI technology, and its on-resistance (RDS(ON)) is 1000mΩ at VGS = 10V, and has a high drain current capability (ID) of 5A. The device is designed to handle applications with high voltages and medium currents.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
2. **Channel configuration**: Single N channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Drain current (ID)**: 5A
8. **Technology**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to 150°C
10. **Maximum power dissipation (Ptot)**: Determined by heat dissipation conditions, generally 30W
Domain and module applications:
The high voltage withstand capability and medium current handling capability of the HMS4N70K-VB MOSFET enable it to excel in multiple high voltage application scenarios. Here are some application areas and module examples:
1. **High Voltage Switch**: Due to its high voltage withstand capability of 700V, the HMS4N70K-VB is suitable for high voltage switching applications, such as in high voltage direct current (DC) switching power supplies. This high voltage capability ensures its reliable operation in high voltage environments.
2. **Power Amplifier**: In high voltage power amplifier designs, the HMS4N70K-VB can be used as a switching element, such as in power amplifiers or RF amplifiers. Its high voltage withstand capability and stable switching performance enable it to effectively handle high power signals.
3. **Power Management System**: In power management systems, such as high voltage power converters or high voltage battery management systems, HMS4N70K-VB can provide efficient current control and switching capabilities. It can work stably under high voltage conditions and improve the overall efficiency of the system.
4. **Industrial Power**: In industrial power systems, HMS4N70K-VB can be used for high voltage power transmission and switch control. These applications require high withstand voltage and reliable switching performance to ensure the safe operation and stability of industrial equipment.
In short, the high voltage tolerance and moderate on-resistance of HMS4N70K-VB make it show a wide range of application potential in high voltage switches, power amplifiers, power management and industrial power supplies.
Technical support:
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