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HMS4N70F-VB Product details
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1. HMS4N70F-VB Product Introduction
HMS4N70F-VB is a high-voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and medium current applications. It can withstand drain-source voltage (VDS) up to 700V and is suitable for use in high voltage environments. This MOSFET adopts SJ_Multi-EPI technology, which provides excellent thermal stability and switching performance. Its on-resistance (RDS(ON)) is 1100mΩ (VGS=10V) and the maximum drain current (ID) is 5A, ensuring reliability and stability in high voltage applications.
HMS4N70F-VB is a high-voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and medium current applications. It can withstand drain-source voltage (VDS) up to 700V and is suitable for use in high voltage environments. This MOSFET adopts SJ_Multi-EPI technology, which provides excellent thermal stability and switching performance. Its on-resistance (RDS(ON)) is 1100mΩ (VGS=10V) and the maximum drain current (ID) is 5A, ensuring reliability and stability in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HMS4N70F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package form**: TO220F, suitable for high power and high voltage applications.
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package form**: TO220F, suitable for high power and high voltage applications.
Domain and module applications：
3. Application fields and module examples
The high voltage and high tolerance of HMS4N70F-VB MOSFET enable it to perform well in a variety of high-voltage applications. In the field of power conversion, the device is suitable for switching elements of high-voltage DC-DC converters or AC-DC converters to help improve the efficiency and stability of the power system. Its high-voltage capability also makes it widely used in power inverters, which can effectively handle high-voltage outputs and ensure reliable operation of the system. In addition, this MOSFET is also suitable for high-voltage switching circuits and protection circuits in industrial equipment, providing reliable switching control and overvoltage protection. In lighting systems, HMS4N70F-VB can be used in electronic ballasts to support high-voltage operation and reduce energy loss in the system.
The high voltage and high tolerance of HMS4N70F-VB MOSFET enable it to perform well in a variety of high-voltage applications. In the field of power conversion, the device is suitable for switching elements of high-voltage DC-DC converters or AC-DC converters to help improve the efficiency and stability of the power system. Its high-voltage capability also makes it widely used in power inverters, which can effectively handle high-voltage outputs and ensure reliable operation of the system. In addition, this MOSFET is also suitable for high-voltage switching circuits and protection circuits in industrial equipment, providing reliable switching control and overvoltage protection. In lighting systems, HMS4N70F-VB can be used in electronic ballasts to support high-voltage operation and reduce energy loss in the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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