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HMS3205D-VB Product details
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HMS3205D-VB is a high-performance single N-channel power MOSFET manufactured using advanced Trench technology and packaged in TO263. The device has excellent low on-resistance and high current handling capability, making it suitable for high-efficiency power switching and power management applications. The drain-source voltage (V_DS) of HMS3205D-VB reaches 60V, which can meet the needs of medium voltage applications. Its on-resistance (R_DS(ON)) is 12mΩ at V_GS=4.5V and 3.2mΩ at V_GS=10V, providing extremely low power consumption and heat generation. The device can withstand a continuous drain current (I_D) of up to 210A, making it suitable for applications that require high current handling. HMS3205D-VB provides an efficient and reliable solution for power management, motor drives, switching power supplies and other high-power circuits.
HMS3205D-VB is a high-performance single N-channel power MOSFET manufactured using advanced Trench technology and packaged in TO263. The device has excellent low on-resistance and high current handling capability, making it suitable for high-efficiency power switching and power management applications. The drain-source voltage (V_DS) of HMS3205D-VB reaches 60V, which can meet the needs of medium voltage applications. Its on-resistance (R_DS(ON)) is 12mΩ at V_GS=4.5V and 3.2mΩ at V_GS=10V, providing extremely low power consumption and heat generation. The device can withstand a continuous drain current (I_D) of up to 210A, making it suitable for applications that require high current handling. HMS3205D-VB provides an efficient and reliable solution for power management, motor drives, switching power supplies and other high-power circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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1. **Package type (Package): TO263**
- **Description: **TO263 package is a common surface mount package with good heat dissipation performance and miniaturized design. This package is suitable for high-power applications that require good thermal management and electrical connections.
2. **Configuration (Configuration): Single N-Channel**
- **Description: **HMS3205D-VB is a single N-channel MOSFET suitable for switching and amplification applications. N-channel MOSFETs generally provide lower on-resistance and higher switching speeds, suitable for efficient power conversion and control.
3. **Drain-Source Voltage (V_DS): 60V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The 60V withstand voltage capability is suitable for medium-voltage power and control applications, and can work stably in the corresponding electrical environment.
4. **Gate-Source Voltage (V_GS): ±20V**
- **Description: **This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and is compatible with different drive voltage requirements.
5. **Threshold Voltage (V_th): 3V**
- **Description: **This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3V threshold voltage allows the device to be effectively turned on at a relatively low drive voltage, which is suitable for low-voltage control systems.
6. **On-Resistance (R_DS(ON)): 12mΩ (@V_GS=4.5V); 3.2mΩ (@V_GS=10V)**
- **Description: **This is the drain-source resistance of the device in the on state, which is 12mΩ and 3.2mΩ respectively at different gate-source voltages. Low on-resistance means lower power consumption and heat generation, improving system efficiency and reliability.
7. **Continuous Drain Current (I_D): 210A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 210A current handling capability is suitable for high-power applications such as power conversion and motor drive systems.
8. **Technology: Trench**
- **Description: **Trench technology is an advanced manufacturing process that reduces on-resistance and increases switching speed by optimizing the cross-sectional structure of the device. This technology enables MOSFETs to have higher efficiency and lower power consumption in high-power applications.
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1. **Package type (Package): TO263**
- **Description: **TO263 package is a common surface mount package with good heat dissipation performance and miniaturized design. This package is suitable for high-power applications that require good thermal management and electrical connections.
2. **Configuration (Configuration): Single N-Channel**
- **Description: **HMS3205D-VB is a single N-channel MOSFET suitable for switching and amplification applications. N-channel MOSFETs generally provide lower on-resistance and higher switching speeds, suitable for efficient power conversion and control.
3. **Drain-Source Voltage (V_DS): 60V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The 60V withstand voltage capability is suitable for medium-voltage power and control applications, and can work stably in the corresponding electrical environment.
4. **Gate-Source Voltage (V_GS): ±20V**
- **Description: **This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and is compatible with different drive voltage requirements.
5. **Threshold Voltage (V_th): 3V**
- **Description: **This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3V threshold voltage allows the device to be effectively turned on at a relatively low drive voltage, which is suitable for low-voltage control systems.
6. **On-Resistance (R_DS(ON)): 12mΩ (@V_GS=4.5V); 3.2mΩ (@V_GS=10V)**
- **Description: **This is the drain-source resistance of the device in the on state, which is 12mΩ and 3.2mΩ respectively at different gate-source voltages. Low on-resistance means lower power consumption and heat generation, improving system efficiency and reliability.
7. **Continuous Drain Current (I_D): 210A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 210A current handling capability is suitable for high-power applications such as power conversion and motor drive systems.
8. **Technology: Trench**
- **Description: **Trench technology is an advanced manufacturing process that reduces on-resistance and increases switching speed by optimizing the cross-sectional structure of the device. This technology enables MOSFETs to have higher efficiency and lower power consumption in high-power applications.
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Domain and module applications：
*III. Application fields and module examples of HMS3205D-VB**
The excellent performance of HMS3205D-VB power MOSFET makes it suitable for a variety of high-power, high-efficiency electronic applications and modules.
1. **High-power switching power supply (SMPS)**
- In switching power supply applications, the low on-resistance and high current handling capability of HMS3205D-VB make it an ideal power switching element. Its high efficiency and low power consumption characteristics can significantly improve the overall efficiency of the power converter, and it is suitable for computer power supplies, industrial power adapters, and high-efficiency power modules.
2. **Motor drive**
- HMS3205D-VB can handle high currents in motor drive systems and provide stable switching performance. Its high current handling capability and low on-resistance make it suitable for DC motor drives, stepper motor control systems, and servo motor drives, and can accurately control the operation of the motor and improve the performance and efficiency of the system.
3. **Power Management**
- In power management systems, the HMS3205D-VB is able to handle high power and high current requirements. Its low on-resistance and high current capability make it suitable for battery management systems, power converters, and regulated power supplies, providing stable power support for a variety of electronic devices.
4. **Battery Charger**
- In battery chargers, the HMS3205D-VB provides an efficient power switch solution. Its low on-resistance and high current capability make it suitable for efficient charging and battery management, ensuring charging efficiency and reducing energy loss, and is suitable for a variety of portable electronic devices and battery charging systems.
5. **Inverter**
- In solar inverters and wind inverters, the HMS3205D-VB is able to efficiently convert DC to AC. Its high withstand voltage and low conduction loss characteristics improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Amplifier**
- In power amplifier applications, the HMS3205D-VB is able to handle high currents and provide efficient power switching solutions. Its low on-resistance and high current capability make it suitable for wireless communications, audio amplification, and other power amplification applications, ensuring efficient operation of the system.
The superior performance and reliability of the HMS3205D-VB power MOSFET enable it to perform well in a variety of high-power, high-efficiency applications, providing efficient and stable power supply and control solutions.
The excellent performance of HMS3205D-VB power MOSFET makes it suitable for a variety of high-power, high-efficiency electronic applications and modules.
1. **High-power switching power supply (SMPS)**
- In switching power supply applications, the low on-resistance and high current handling capability of HMS3205D-VB make it an ideal power switching element. Its high efficiency and low power consumption characteristics can significantly improve the overall efficiency of the power converter, and it is suitable for computer power supplies, industrial power adapters, and high-efficiency power modules.
2. **Motor drive**
- HMS3205D-VB can handle high currents in motor drive systems and provide stable switching performance. Its high current handling capability and low on-resistance make it suitable for DC motor drives, stepper motor control systems, and servo motor drives, and can accurately control the operation of the motor and improve the performance and efficiency of the system.
3. **Power Management**
- In power management systems, the HMS3205D-VB is able to handle high power and high current requirements. Its low on-resistance and high current capability make it suitable for battery management systems, power converters, and regulated power supplies, providing stable power support for a variety of electronic devices.
4. **Battery Charger**
- In battery chargers, the HMS3205D-VB provides an efficient power switch solution. Its low on-resistance and high current capability make it suitable for efficient charging and battery management, ensuring charging efficiency and reducing energy loss, and is suitable for a variety of portable electronic devices and battery charging systems.
5. **Inverter**
- In solar inverters and wind inverters, the HMS3205D-VB is able to efficiently convert DC to AC. Its high withstand voltage and low conduction loss characteristics improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Amplifier**
- In power amplifier applications, the HMS3205D-VB is able to handle high currents and provide efficient power switching solutions. Its low on-resistance and high current capability make it suitable for wireless communications, audio amplification, and other power amplification applications, ensuring efficient operation of the system.
The superior performance and reliability of the HMS3205D-VB power MOSFET enable it to perform well in a variety of high-power, high-efficiency applications, providing efficient and stable power supply and control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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