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HMS21N70F-VB Product details
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1. HMS21N70F-VB Product Introduction
HMS21N70F-VB is a high-voltage, high-current N-channel power MOSFET in a TO-220F package, specially designed to handle high-voltage and high-current applications. The device supports a drain-source voltage (VDS) of 700V and a continuous drain current (ID) of 20A, suitable for power electronic systems that require high voltage resistance and high current handling capabilities. The MOSFET has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 160mΩ at a gate voltage of 10V, which helps reduce power losses and improve the overall efficiency of the system. It uses super junction (SJ) multi-epitaxial (Multi-EPI) technology to further optimize electrical performance and durability.
HMS21N70F-VB is a high-voltage, high-current N-channel power MOSFET in a TO-220F package, specially designed to handle high-voltage and high-current applications. The device supports a drain-source voltage (VDS) of 700V and a continuous drain current (ID) of 20A, suitable for power electronic systems that require high voltage resistance and high current handling capabilities. The MOSFET has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 160mΩ at a gate voltage of 10V, which helps reduce power losses and improve the overall efficiency of the system. It uses super junction (SJ) multi-epitaxial (Multi-EPI) technology to further optimize electrical performance and durability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HMS21N70F-VB Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Maximum power dissipation**: 94W (The specific value may vary depending on the actual heat dissipation conditions and working environment)
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Maximum power dissipation**: 94W (The specific value may vary depending on the actual heat dissipation conditions and working environment)
Domain and module applications：
3. Application fields and module examples
HMS21N70F-VB MOSFET is suitable for various high voltage and high current power electronics applications. The following are several specific application scenarios:
1. **High voltage switching power supply**: In the high voltage switching power supply system, HMS21N70F-VB can be used as the main switching element to handle high voltage input and output, optimize power conversion efficiency, and maintain stable operation under high voltage load.
2. **Motor drive**: In industrial motor drives and power tools, HMS21N70F-VB can be used to control the switching of high voltage motors, ensuring reliable operation of motors under high load conditions and reducing power loss.
3. **Solar inverter**: In solar inverters, HMS21N70F-VB can be used in the high voltage DC to AC conversion process, providing high-efficiency power conversion and enhancing system stability and efficiency.
4. **Uninterruptible Power Supply (UPS) System**: In a UPS system, this MOSFET can handle high voltage and high current loads, ensure power stability and improve system reliability, and ensure continuous power supply in the event of a grid failure.
HMS21N70F-VB MOSFET is suitable for various high voltage and high current power electronics applications. The following are several specific application scenarios:
1. **High voltage switching power supply**: In the high voltage switching power supply system, HMS21N70F-VB can be used as the main switching element to handle high voltage input and output, optimize power conversion efficiency, and maintain stable operation under high voltage load.
2. **Motor drive**: In industrial motor drives and power tools, HMS21N70F-VB can be used to control the switching of high voltage motors, ensuring reliable operation of motors under high load conditions and reducing power loss.
3. **Solar inverter**: In solar inverters, HMS21N70F-VB can be used in the high voltage DC to AC conversion process, providing high-efficiency power conversion and enhancing system stability and efficiency.
4. **Uninterruptible Power Supply (UPS) System**: In a UPS system, this MOSFET can handle high voltage and high current loads, ensure power stability and improve system reliability, and ensure continuous power supply in the event of a grid failure.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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