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HMS21N65A-VB Product details
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HMS21N65A-VB MOSFET Product Introduction
HMS21N65A-VB is a high-voltage N-channel MOSFET in TO3P package, designed for high-voltage and high-power applications. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and can handle a maximum continuous drain current (ID) of up to 20A. The MOSFET has an on-resistance of 190mΩ (at VGS=10V) and uses Super Junction and Multi-EPI technology to provide excellent voltage tolerance and switching performance. HMS21N65A-VB is suitable for a variety of high-voltage and high-power applications, with good switching characteristics and high efficiency.
HMS21N65A-VB is a high-voltage N-channel MOSFET in TO3P package, designed for high-voltage and high-power applications. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and can handle a maximum continuous drain current (ID) of up to 20A. The MOSFET has an on-resistance of 190mΩ (at VGS=10V) and uses Super Junction and Multi-EPI technology to provide excellent voltage tolerance and switching performance. HMS21N65A-VB is suitable for a variety of high-voltage and high-power applications, with good switching characteristics and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
HMS21N65A-VB MOSFET Detailed parameter description
- **Package form**: TO3P
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction (SJ_Multi-EPI)
- **Package form**: TO3P
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and modules of HMS21N65A-VB
1. **Power converter**: HMS21N65A-VB is suitable for high-voltage DC-DC converters and switching elements in AC-DC power supplies. Its high voltage tolerance and good switching performance enable it to handle high power conversion and is suitable for use in power modules that require high efficiency and stability, such as industrial power supplies and communication power supplies.
2. **Inverter**: In inverter applications, such as solar inverters or electric vehicle inverters, HMS21N65A-VB is able to handle high voltages and high currents, providing efficient power conversion. Its low on-resistance and high voltage capability make it an ideal choice for high-voltage inverter circuits, which can improve the efficiency and reliability of inverter systems.
3. **Switching power supply**: In high-voltage switching power supplies, this MOSFET can be used as a switching element to help achieve efficient power conversion and control. Its high voltage and high current capabilities are suitable for use in high-power power applications such as uninterruptible power supply (UPS) systems and power adapters.
4. **Motor Control**: HMS21N65A-VB provides stable current control and efficient switching performance in high-voltage motor control applications such as power tools and industrial motor drives. Its high current handling capability and withstand voltage characteristics ensure efficient and stable motor control, and is suitable for motor drive systems that require high power and high reliability.
1. **Power converter**: HMS21N65A-VB is suitable for high-voltage DC-DC converters and switching elements in AC-DC power supplies. Its high voltage tolerance and good switching performance enable it to handle high power conversion and is suitable for use in power modules that require high efficiency and stability, such as industrial power supplies and communication power supplies.
2. **Inverter**: In inverter applications, such as solar inverters or electric vehicle inverters, HMS21N65A-VB is able to handle high voltages and high currents, providing efficient power conversion. Its low on-resistance and high voltage capability make it an ideal choice for high-voltage inverter circuits, which can improve the efficiency and reliability of inverter systems.
3. **Switching power supply**: In high-voltage switching power supplies, this MOSFET can be used as a switching element to help achieve efficient power conversion and control. Its high voltage and high current capabilities are suitable for use in high-power power applications such as uninterruptible power supply (UPS) systems and power adapters.
4. **Motor Control**: HMS21N65A-VB provides stable current control and efficient switching performance in high-voltage motor control applications such as power tools and industrial motor drives. Its high current handling capability and withstand voltage characteristics ensure efficient and stable motor control, and is suitable for motor drive systems that require high power and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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