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HMS15N65F-VB Product details
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HMS15N65F-VB is a high-efficiency single N-channel power MOSFET manufactured using super junction multi-epitaxial (SJ_Multi-EPI) technology and packaged in TO220F. The device has excellent high-voltage tolerance and low on-resistance, making it ideal for high-power and high-efficiency electronic applications. Its drain-source voltage (V_DS) reaches 650V, ensuring stable operation under high voltage conditions. The on-resistance (R_DS(ON)) is 160mΩ (at V_GS=10V), providing excellent electrical performance, reducing power consumption and improving the overall efficiency of the system. HMS15N65F-VB can withstand a maximum continuous drain current (I_D) of 20A, and is suitable for a variety of applications such as power management, motor drive, lighting control, etc., providing an efficient and reliable power switching solution.
HMS15N65F-VB is a high-efficiency single N-channel power MOSFET manufactured using super junction multi-epitaxial (SJ_Multi-EPI) technology and packaged in TO220F. The device has excellent high-voltage tolerance and low on-resistance, making it ideal for high-power and high-efficiency electronic applications. Its drain-source voltage (V_DS) reaches 650V, ensuring stable operation under high voltage conditions. The on-resistance (R_DS(ON)) is 160mΩ (at V_GS=10V), providing excellent electrical performance, reducing power consumption and improving the overall efficiency of the system. HMS15N65F-VB can withstand a maximum continuous drain current (I_D) of 20A, and is suitable for a variety of applications such as power management, motor drive, lighting control, etc., providing an efficient and reliable power switching solution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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1. **Package Type (Package): TO220F**
- **Description: **TO220F package is a widely used power MOSFET package with good heat dissipation performance and electrical insulation characteristics. It provides stable mechanical support and electrical connection, suitable for high-power applications that require good thermal management.
2. **Configuration (Configuration): Single N-Channel **
- **Description: **HMS15N65F-VB is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel design usually has lower on-resistance and higher switching speed, which is very suitable for efficient power conversion and control applications.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high voltage withstand capability of 650V makes it suitable for high-voltage power supplies and industrial applications, and can operate stably under high voltage conditions.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description: **This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and can adapt to different drive voltage requirements.
5. **Threshold Voltage (V_th): 3.5V**
- **Description: **This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3.5V threshold voltage allows the device to be effectively turned on at a lower drive voltage, suitable for low-voltage control systems.
6. **On-Resistance (R_DS(ON)): 160mΩ (@V_GS=10V)**
- **Description: **This is the drain-source resistance of the device in the on state, measured at a gate-source voltage of 10V. Lower on-resistance reduces power consumption and heat generation, improving system efficiency and reliability.
7. **Continuous Drain Current (I_D): 20A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 20A current handling capability is suitable for medium to high power applications such as power conversion and motor drive systems.
8. **Technology: Super Junction Multi-Epi (SJ_Multi-EPI)**
- **Description: **SJ_Multi-EPI technology is an advanced manufacturing process that reduces on-resistance while maintaining high voltage withstand capability by introducing a multi-layer epitaxial structure. This technology enables MOSFETs to have lower power consumption and higher efficiency in high voltage applications.
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1. **Package Type (Package): TO220F**
- **Description: **TO220F package is a widely used power MOSFET package with good heat dissipation performance and electrical insulation characteristics. It provides stable mechanical support and electrical connection, suitable for high-power applications that require good thermal management.
2. **Configuration (Configuration): Single N-Channel **
- **Description: **HMS15N65F-VB is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel design usually has lower on-resistance and higher switching speed, which is very suitable for efficient power conversion and control applications.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high voltage withstand capability of 650V makes it suitable for high-voltage power supplies and industrial applications, and can operate stably under high voltage conditions.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description: **This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and can adapt to different drive voltage requirements.
5. **Threshold Voltage (V_th): 3.5V**
- **Description: **This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3.5V threshold voltage allows the device to be effectively turned on at a lower drive voltage, suitable for low-voltage control systems.
6. **On-Resistance (R_DS(ON)): 160mΩ (@V_GS=10V)**
- **Description: **This is the drain-source resistance of the device in the on state, measured at a gate-source voltage of 10V. Lower on-resistance reduces power consumption and heat generation, improving system efficiency and reliability.
7. **Continuous Drain Current (I_D): 20A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 20A current handling capability is suitable for medium to high power applications such as power conversion and motor drive systems.
8. **Technology: Super Junction Multi-Epi (SJ_Multi-EPI)**
- **Description: **SJ_Multi-EPI technology is an advanced manufacturing process that reduces on-resistance while maintaining high voltage withstand capability by introducing a multi-layer epitaxial structure. This technology enables MOSFETs to have lower power consumption and higher efficiency in high voltage applications.
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Domain and module applications：
3. Application fields and module examples of HMS15N65F-VB**
HMS15N65F-VB power MOSFET is widely used in various high-power and high-efficiency electronic systems with its excellent electrical performance and reliability, and is suitable for multiple fields and modules.
1. **Switching Power Supply (SMPS)**
- In switching power supply applications, the high withstand voltage and low on-resistance of HMS15N65F-VB make it an ideal power switching element. Its high efficiency and low power consumption characteristics can significantly improve the overall efficiency of the power converter, and it is suitable for computer power supplies, industrial power adapters, etc.
2. **Motor Drive**
- HMS15N65F-VB can handle high currents in motor drive systems and provide stable switching performance. Its excellent electrical characteristics make it suitable for DC motor drives, stepper motor control systems, and servo motor drives, and can accurately control the operation of the motor and improve the performance and efficiency of the system.
3. **Industrial Power Systems**
- In industrial power and control systems, the high voltage and high current handling capabilities of the HMS15N65F-VB enable it to operate stably, and are suitable for power converters, voltage-stabilized power supplies, and industrial automation equipment, providing reliable power support.
4. **Lighting Control**
- In LED lighting and fluorescent lamp ballasts, the HMS15N65F-VB can efficiently control current and stabilize power. Its low on-resistance and high current capability ensure efficient operation and long life of the lighting system, and is widely used in commercial and industrial lighting systems.
5. **Renewable Energy Inverter**
- In solar and wind energy systems, the HMS15N65F-VB can efficiently convert DC power into AC power. Its high withstand voltage and low conduction loss characteristics improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Adapter and Charger**
- In power adapter and charger, HMS15N65F-VB provides an efficient power switch solution. Its low on-resistance and high current handling capability make it suitable for various charger and power adapter designs, ensuring charging efficiency and reducing energy loss.
With its superior performance and reliability, HMS15N65F-VB power MOSFET meets the needs of high-power and high-efficiency applications and is widely used in multiple key areas to provide efficient and stable power supply and control solutions.
HMS15N65F-VB power MOSFET is widely used in various high-power and high-efficiency electronic systems with its excellent electrical performance and reliability, and is suitable for multiple fields and modules.
1. **Switching Power Supply (SMPS)**
- In switching power supply applications, the high withstand voltage and low on-resistance of HMS15N65F-VB make it an ideal power switching element. Its high efficiency and low power consumption characteristics can significantly improve the overall efficiency of the power converter, and it is suitable for computer power supplies, industrial power adapters, etc.
2. **Motor Drive**
- HMS15N65F-VB can handle high currents in motor drive systems and provide stable switching performance. Its excellent electrical characteristics make it suitable for DC motor drives, stepper motor control systems, and servo motor drives, and can accurately control the operation of the motor and improve the performance and efficiency of the system.
3. **Industrial Power Systems**
- In industrial power and control systems, the high voltage and high current handling capabilities of the HMS15N65F-VB enable it to operate stably, and are suitable for power converters, voltage-stabilized power supplies, and industrial automation equipment, providing reliable power support.
4. **Lighting Control**
- In LED lighting and fluorescent lamp ballasts, the HMS15N65F-VB can efficiently control current and stabilize power. Its low on-resistance and high current capability ensure efficient operation and long life of the lighting system, and is widely used in commercial and industrial lighting systems.
5. **Renewable Energy Inverter**
- In solar and wind energy systems, the HMS15N65F-VB can efficiently convert DC power into AC power. Its high withstand voltage and low conduction loss characteristics improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Adapter and Charger**
- In power adapter and charger, HMS15N65F-VB provides an efficient power switch solution. Its low on-resistance and high current handling capability make it suitable for various charger and power adapter designs, ensuring charging efficiency and reducing energy loss.
With its superior performance and reliability, HMS15N65F-VB power MOSFET meets the needs of high-power and high-efficiency applications and is widely used in multiple key areas to provide efficient and stable power supply and control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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