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HMS15N60F-VB Product details
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HMS15N60F-VB MOSFET Product Introduction
HMS15N60F-VB is a high-performance N-channel MOSFET in TO220F package. This MOSFET has a high drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications. It adopts SJ_Multi-EPI (Super Junction Multilayer Epitaxy) technology, with excellent switching performance and low on-resistance, suitable for electronic systems requiring high performance and stability.
HMS15N60F-VB is a high-performance N-channel MOSFET in TO220F package. This MOSFET has a high drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications. It adopts SJ_Multi-EPI (Super Junction Multilayer Epitaxy) technology, with excellent switching performance and low on-resistance, suitable for electronic systems requiring high performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The HMS15N60F-VB is ideal for use in high-voltage switching power supplies. Its high withstand voltage of 650V ensures stability in high-voltage environments, while its low on-resistance of 160mΩ helps reduce power consumption and improve system efficiency. This makes it an ideal choice for high-efficiency power conversion applications.
2. **Power Inverter**: In solar inverters or uninterruptible power supply (UPS) systems, the HMS15N60F-VB can be used as a key switching element. Its high withstand voltage and low conduction loss enable it to provide stable performance during high-voltage inversion, thereby improving the efficiency and reliability of the entire inverter.
3. **Motor Drive**: This MOSFET is also suitable for high-voltage switching applications in motor drive systems. Its 20A drain current capability and 650V withstand voltage can effectively handle the high voltage and high current requirements in motor drives, ensuring the stability and efficiency of motor operation.
HMS15N60F-VB provides excellent performance and high voltage handling capability, and is widely suitable for various high voltage electronic applications and modules. It is a reliable choice in power management and power conversion systems.
1. **Switching Power Supply (SMPS)**: The HMS15N60F-VB is ideal for use in high-voltage switching power supplies. Its high withstand voltage of 650V ensures stability in high-voltage environments, while its low on-resistance of 160mΩ helps reduce power consumption and improve system efficiency. This makes it an ideal choice for high-efficiency power conversion applications.
2. **Power Inverter**: In solar inverters or uninterruptible power supply (UPS) systems, the HMS15N60F-VB can be used as a key switching element. Its high withstand voltage and low conduction loss enable it to provide stable performance during high-voltage inversion, thereby improving the efficiency and reliability of the entire inverter.
3. **Motor Drive**: This MOSFET is also suitable for high-voltage switching applications in motor drive systems. Its 20A drain current capability and 650V withstand voltage can effectively handle the high voltage and high current requirements in motor drives, ensuring the stability and efficiency of motor operation.
HMS15N60F-VB provides excellent performance and high voltage handling capability, and is widely suitable for various high voltage electronic applications and modules. It is a reliable choice in power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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