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HMS11N60F-VB Product details
Back to previous pageProduct introduction：
*1. Product Introduction of HMS11N60F-VB**
HMS11N60F-VB is a high-performance single N-channel power MOSFET manufactured with planar process technology and packaged in TO220F. The device has the characteristics of high withstand voltage and low on-resistance, making it very suitable for high-voltage and high-current applications. Its drain-source voltage (V_DS) reaches 650V, and it can work stably under high voltage conditions, while its on-resistance (R_DS(ON)) is 320mΩ (at V_GS=10V), ensuring low power consumption and high-efficiency operation. HMS11N60F-VB supports a maximum continuous drain current (I_D) of 20A, and is suitable for various power management, switching power supplies, industrial control, motor drive and other applications, providing efficient and reliable power switching solutions.
HMS11N60F-VB is a high-performance single N-channel power MOSFET manufactured with planar process technology and packaged in TO220F. The device has the characteristics of high withstand voltage and low on-resistance, making it very suitable for high-voltage and high-current applications. Its drain-source voltage (V_DS) reaches 650V, and it can work stably under high voltage conditions, while its on-resistance (R_DS(ON)) is 320mΩ (at V_GS=10V), ensuring low power consumption and high-efficiency operation. HMS11N60F-VB supports a maximum continuous drain current (I_D) of 20A, and is suitable for various power management, switching power supplies, industrial control, motor drive and other applications, providing efficient and reliable power switching solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
*2. Detailed parameter description of HMS11N60F-VB**
1. **Package type (Package): TO220F**
- **Description: **TO220F package is a commonly used power MOSFET package with good heat dissipation performance and electrical insulation characteristics. This package is suitable for high-power applications and occasions requiring good thermal management, while providing reliable mechanical support and electrical connections.
2. **Configuration (Configuration): Single N-Channel **
- **Description: **HMS11N60F-VB is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel design generally provides lower on-resistance and higher switching speed, suitable for efficient power conversion and control applications.
3. **Drain-source voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high withstand voltage of 650V makes it suitable for high voltage power supply and industrial applications, and can work stably in harsh electrical environments.
4. **Gate-source voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility for the drive circuit and can be compatible with different control voltage requirements.
5. **Threshold voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start turning on. The threshold voltage of 3.5V allows the device to be effectively turned on at a relatively low drive voltage, which is suitable for low-voltage control systems.
6. **On-resistance (R_DS(ON)): 320mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured under the gate-source voltage of 10V. Lower on-resistance means lower power consumption and heat generation, improving efficiency and reducing overall energy loss in the system.
7. **Continuous Drain Current (I_D): 20A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 20A current handling capability is suitable for high-power applications such as power conversion and motor drive.
8. **Technology: Planar**
- **Description: **Planar is a mature and reliable semiconductor manufacturing technology that improves the electrical performance and stability of the device by optimizing the planar structure. MOSFETs using planar technology generally have consistent characteristics and high reliability, suitable for a wide range of industrial applications.
1. **Package type (Package): TO220F**
- **Description: **TO220F package is a commonly used power MOSFET package with good heat dissipation performance and electrical insulation characteristics. This package is suitable for high-power applications and occasions requiring good thermal management, while providing reliable mechanical support and electrical connections.
2. **Configuration (Configuration): Single N-Channel **
- **Description: **HMS11N60F-VB is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel design generally provides lower on-resistance and higher switching speed, suitable for efficient power conversion and control applications.
3. **Drain-source voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high withstand voltage of 650V makes it suitable for high voltage power supply and industrial applications, and can work stably in harsh electrical environments.
4. **Gate-source voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility for the drive circuit and can be compatible with different control voltage requirements.
5. **Threshold voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start turning on. The threshold voltage of 3.5V allows the device to be effectively turned on at a relatively low drive voltage, which is suitable for low-voltage control systems.
6. **On-resistance (R_DS(ON)): 320mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured under the gate-source voltage of 10V. Lower on-resistance means lower power consumption and heat generation, improving efficiency and reducing overall energy loss in the system.
7. **Continuous Drain Current (I_D): 20A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 20A current handling capability is suitable for high-power applications such as power conversion and motor drive.
8. **Technology: Planar**
- **Description: **Planar is a mature and reliable semiconductor manufacturing technology that improves the electrical performance and stability of the device by optimizing the planar structure. MOSFETs using planar technology generally have consistent characteristics and high reliability, suitable for a wide range of industrial applications.
Domain and module applications：
3. Application fields and module examples of HMS11N60F-VB**
HMS11N60F-VB power MOSFET has high voltage and high current handling capabilities, suitable for a variety of high-power, high-efficiency application scenarios.
1. **Switching Power Supply (SMPS)**
- In switching power supply applications, the high withstand voltage and low on-resistance of HMS11N60F-VB make it an ideal power switching element. Its excellent switching performance and low power consumption characteristics ensure power conversion efficiency, suitable for use in efficient power supply modules such as computer power supplies and industrial power adapters.
2. **Motor Driver**
- In motor drive systems, HMS11N60F-VB is able to handle high currents and provide stable switching performance. Its high current handling capability and low on-resistance make it suitable for a variety of motor drivers, such as DC motor drivers and stepper motor control systems, which can accurately control the speed and torque of the motor and improve the performance and efficiency of the system.
3. **Industrial Power Systems**
- In industrial power systems, the high withstand voltage and high current handling capabilities of the HMS11N60F-VB enable it to stably handle high power applications. It is suitable for power converters and voltage-stabilized power modules to provide reliable power support for industrial equipment while ensuring efficient operation of the system.
4. **Lighting Systems**
- In LED lighting and fluorescent lamp ballasts, the HMS11N60F-VB is able to effectively control current and provide stable power. Its low on-resistance and high current capability enable it to perform well in lighting drive systems, ensuring high efficiency and long life of lighting systems.
5. **Renewable Energy Inverters**
- In solar and wind power inverters, the HMS11N60F-VB is able to effectively convert DC power into AC power. Its high withstand voltage and low conduction loss characteristics help improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Adapter and Charger**
- In power adapter and charger, HMS11N60F-VB provides an efficient power switch solution. Its low on-resistance and high current handling capability make it suitable for efficient charging and power adapter design, ensuring charging efficiency and reducing energy loss.
The excellent performance of HMS11N60F-VB power MOSFET makes it widely used in various high-voltage and high-current electronic systems, meeting the needs of efficient and reliable power conversion and control.
HMS11N60F-VB power MOSFET has high voltage and high current handling capabilities, suitable for a variety of high-power, high-efficiency application scenarios.
1. **Switching Power Supply (SMPS)**
- In switching power supply applications, the high withstand voltage and low on-resistance of HMS11N60F-VB make it an ideal power switching element. Its excellent switching performance and low power consumption characteristics ensure power conversion efficiency, suitable for use in efficient power supply modules such as computer power supplies and industrial power adapters.
2. **Motor Driver**
- In motor drive systems, HMS11N60F-VB is able to handle high currents and provide stable switching performance. Its high current handling capability and low on-resistance make it suitable for a variety of motor drivers, such as DC motor drivers and stepper motor control systems, which can accurately control the speed and torque of the motor and improve the performance and efficiency of the system.
3. **Industrial Power Systems**
- In industrial power systems, the high withstand voltage and high current handling capabilities of the HMS11N60F-VB enable it to stably handle high power applications. It is suitable for power converters and voltage-stabilized power modules to provide reliable power support for industrial equipment while ensuring efficient operation of the system.
4. **Lighting Systems**
- In LED lighting and fluorescent lamp ballasts, the HMS11N60F-VB is able to effectively control current and provide stable power. Its low on-resistance and high current capability enable it to perform well in lighting drive systems, ensuring high efficiency and long life of lighting systems.
5. **Renewable Energy Inverters**
- In solar and wind power inverters, the HMS11N60F-VB is able to effectively convert DC power into AC power. Its high withstand voltage and low conduction loss characteristics help improve the efficiency of the inverter, supporting the efficient use and stable output of renewable energy.
6. **Power Adapter and Charger**
- In power adapter and charger, HMS11N60F-VB provides an efficient power switch solution. Its low on-resistance and high current handling capability make it suitable for efficient charging and power adapter design, ensuring charging efficiency and reducing energy loss.
The excellent performance of HMS11N60F-VB power MOSFET makes it widely used in various high-voltage and high-current electronic systems, meeting the needs of efficient and reliable power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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