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HM9N90F-VB Product details
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Product Introduction
**HM9N90F-VB** is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 900V, which is suitable for handling switch control tasks in high voltage environments. It uses SJ_Multi-EPI technology, which helps to improve the voltage resistance and switching performance of the MOSFET. The gate-source voltage (VGS) of this MOSFET can reach ±30V, which is suitable for various driving conditions.
**HM9N90F-VB** is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 900V, which is suitable for handling switch control tasks in high voltage environments. It uses SJ_Multi-EPI technology, which helps to improve the voltage resistance and switching performance of the MOSFET. The gate-source voltage (VGS) of this MOSFET can reach ±30V, which is suitable for various driving conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: HM9N90F-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 770mΩ (VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: HM9N90F-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 770mΩ (VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Power converter**: Due to its high withstand voltage of 900V, the HM9N90F-VB is suitable for high-voltage power converters such as high-voltage switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). In these applications, it is able to handle switching control at high voltages, ensuring system stability and reliability.
2. **Motor drive**: This MOSFET can also be used in motor drive circuits, especially in situations where high voltages need to be handled. Its low RDS(ON) characteristics help reduce power losses in motor drives and improve system efficiency.
3. **Power amplifier**: In high-voltage power amplifier applications, such as high-frequency power amplifiers and radio transmitters, the HM9N90F-VB provides stable switching performance and withstand voltage capabilities, ensuring efficient operation of the equipment.
4. **High-voltage switching circuit**: Its high VDS and moderate ID capabilities make the HM9N90F-VB suitable for use as the main switching element in high-voltage switching circuits. Such circuits are commonly found in power electronic devices and high-voltage transmission systems.
5. **Lighting control**: In high-voltage lighting control systems, the high voltage withstand capability and reliable switching performance of the HM9N90F-VB enable it to stably control high-power lamps such as high-pressure sodium lamps and metal halide lamps.
Through these application scenarios, it can be seen that the high voltage withstand, high current and low RDS(ON) characteristics of the HM9N90F-VB enable it to perform well in high-voltage, high-power environments.
1. **Power converter**: Due to its high withstand voltage of 900V, the HM9N90F-VB is suitable for high-voltage power converters such as high-voltage switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). In these applications, it is able to handle switching control at high voltages, ensuring system stability and reliability.
2. **Motor drive**: This MOSFET can also be used in motor drive circuits, especially in situations where high voltages need to be handled. Its low RDS(ON) characteristics help reduce power losses in motor drives and improve system efficiency.
3. **Power amplifier**: In high-voltage power amplifier applications, such as high-frequency power amplifiers and radio transmitters, the HM9N90F-VB provides stable switching performance and withstand voltage capabilities, ensuring efficient operation of the equipment.
4. **High-voltage switching circuit**: Its high VDS and moderate ID capabilities make the HM9N90F-VB suitable for use as the main switching element in high-voltage switching circuits. Such circuits are commonly found in power electronic devices and high-voltage transmission systems.
5. **Lighting control**: In high-voltage lighting control systems, the high voltage withstand capability and reliable switching performance of the HM9N90F-VB enable it to stably control high-power lamps such as high-pressure sodium lamps and metal halide lamps.
Through these application scenarios, it can be seen that the high voltage withstand, high current and low RDS(ON) characteristics of the HM9N90F-VB enable it to perform well in high-voltage, high-power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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