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HM9N90A-VB Product details
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1. HM9N90A-VB Product Introduction
HM9N90A-VB is a high-performance single N-channel power MOSFET in TO-247 package, designed for high voltage applications. With a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 9A, the device is ideal for applications requiring high voltage and high reliability. With its 750mΩ on-resistance (RDS(ON)) at a low gate voltage (VGS=10V), the device is able to provide good conduction performance while maintaining high voltage tolerance. In addition, the product uses advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to optimize switching performance and improve efficiency, making it ideal for a variety of high-efficiency power systems.
HM9N90A-VB is a high-performance single N-channel power MOSFET in TO-247 package, designed for high voltage applications. With a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 9A, the device is ideal for applications requiring high voltage and high reliability. With its 750mΩ on-resistance (RDS(ON)) at a low gate voltage (VGS=10V), the device is able to provide good conduction performance while maintaining high voltage tolerance. In addition, the product uses advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to optimize switching performance and improve efficiency, making it ideal for a variety of high-efficiency power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. HM9N90A-VB Detailed parameter description
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Maximum power dissipation**: 125W (depending on the specific application scenario and heat dissipation conditions)
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Maximum power dissipation**: 125W (depending on the specific application scenario and heat dissipation conditions)
Domain and module applications：
3. Application fields and module examples
HM9N90A-VB MOSFET is suitable for a variety of high voltage and high efficiency applications due to its high voltage withstand capability and relatively low on-resistance.
1. **Power module**: In high voltage power modules, such as industrial power converters and uninterruptible power supply (UPS) systems, HM9N90A-VB can be used in the main switch position to provide efficient power conversion and ensure reliable operation of the system under high voltage conditions.
2. **Electric vehicle charging station**: In electric vehicle (EV) charging stations, the device can be used in high voltage DC-DC conversion modules to ensure fast and efficient power transmission while reducing power losses.
3. **Solar inverter**: In solar power generation systems, HM9N90A-VB can be used in the power conversion part of the inverter to improve the power conversion efficiency of the solar panel output through its high withstand voltage characteristics and low on-resistance.
4. **Industrial drives**: In industrial motor drives, especially where high-voltage motors need to be controlled, this device can serve as a key switching element, providing stable current control to ensure efficient operation of the equipment.
HM9N90A-VB MOSFET is suitable for a variety of high voltage and high efficiency applications due to its high voltage withstand capability and relatively low on-resistance.
1. **Power module**: In high voltage power modules, such as industrial power converters and uninterruptible power supply (UPS) systems, HM9N90A-VB can be used in the main switch position to provide efficient power conversion and ensure reliable operation of the system under high voltage conditions.
2. **Electric vehicle charging station**: In electric vehicle (EV) charging stations, the device can be used in high voltage DC-DC conversion modules to ensure fast and efficient power transmission while reducing power losses.
3. **Solar inverter**: In solar power generation systems, HM9N90A-VB can be used in the power conversion part of the inverter to improve the power conversion efficiency of the solar panel output through its high withstand voltage characteristics and low on-resistance.
4. **Industrial drives**: In industrial motor drives, especially where high-voltage motors need to be controlled, this device can serve as a key switching element, providing stable current control to ensure efficient operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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